Optical properties of high-Al-content crack free Al(x)Ga1-N-x (x < 0.67) films grown on Si(111) by molecular-beam epitaxy

Natali F; Byrne D; Leroux M; Semond F; Massies J

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Optical properties of high-Al-content crack free Al(x)Ga1-N-x (x < 0.67) films grown on Si(111) by molecular-beam epitaxy

机译：通过分子束外延在Si（111）上生长的高Al含量无裂纹Al（x）Ga1-N-x（x <0.67）薄膜的光学特性

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We report on the optical properties of high-Al-content crack free AlxGa1-xN (x<0.67) films grown by molecular-beam epitaxy on Si(111) substrates using ammonia as nitrogen source. The energetic position of the Al free exciton as a function of the Al content is determined from photoluminescence and reflectivity measurements at low temperature. A bowing parameter of b =1 eV is deduced from these measurements. The excitonic linewidth increases as a function of Al concentration. The observed variation agrees very well with the one calculated using a model in which the broadening effect is assumed to be due to alloy compositional disordering. (C) 2004 Elsevier Ltd. All rights reserved.

机译：我们报告了高分子含量的无裂纹AlxGa1-xN（x <0.67）薄膜的光学性质，该薄膜是通过使用氨作为氮源在Si（111）衬底上通过分子束外延生长的。根据低温下的光致发光和反射率测量确定无铝激子的高能位置随铝含量的变化。从这些测量得出弯曲参数b = 1 eV。激子线宽随Al浓度的增加而增加。观察到的变化与使用模型计算出的变化非常吻合，在该模型中，扩展作用被认为是由于合金成分无序引起的。（C）2004 Elsevier Ltd.保留所有权利。

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来源
《Solid State Communications》 |2004年第10期|p. 679-682|共4页
作者
Natali F; Byrne D; Leroux M; Semond F; Massies J;
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作者单位

CNRS, Ctr Rech Heteroepitaxie Applicat, F-06560 Valbonne, France;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
semiconductors; thin films; epitaxy; optical properties; luminescence; STRAIN RELAXATION; ALGAN; GAN; ALLOYS; SEMICONDUCTORS; LUMINESCENCE;

机译：半导体;薄膜;环氧;光学性能;发光;主弛豫;Algan;GAN;合金;半导体;发光;

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1. Structural and optical characterization of hexagonal crack free GaN films grown on Si(111) by plasma-assisted molecular beam epitaxy (PAMBE) [J] . Optoelectronics and Advanced Materials-Rapid Communications . 2008,第2008期

机译：通过等离子体辅助分子束外延（PAMBE）在Si（111）上生长的六方无裂纹GaN膜的结构和光学表征
2. The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy [J] . Wu CL, Shen CH, Chen HY, Journal of Crystal Growth . 2006,第2期

机译：AlN缓冲液对等离子体辅助分子束外延在Si（111）上生长InN外延膜性能的影响
3. Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy [J] . Calleja E., Basak D., Sanchez FJ., Physical Review, B. Condensed Matter . 1998,第3期

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4. STRUCTURAL AND LIGHT-EMITTING PROPERTIES OF WURTZITE InN FILMS GROWN ON Si(111) BY MOLECULAR-BEAM EPITAXY [C] . S. Gwo, C.-L. Wu, C.-H. Shen, Proceedings vol.2004-02; International Symposia on State-of-the-Art Program on Compound Semiconductors XL(SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices; 20040509-14; San Antonio,TX(US) . 2004

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5. The morphological evolution and optical properties of germanium thin films grown on silicon by molecular beam epitaxy [D] . Deelman, Peter Wessel 1996

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Optical properties of high-Al-content crack free Al(x)Ga1-N-x (x < 0.67) films grown on Si(111) by molecular-beam epitaxy

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