Light-controlled resistive switching characteristics in ZnO/BiFeO_3/ZnO thin film

Liang Dandan; Li Xiaoping; Wang Junshuai; Wu Liangchen; Chen Peng

首页> 外文期刊>Solid-State Electronics >Light-controlled resistive switching characteristics in ZnO/BiFeO_3/ZnO thin film

【24h】

Light-controlled resistive switching characteristics in ZnO/BiFeO_3/ZnO thin film

机译：ZnO / BiFeO_3 / ZnO薄膜中的光控电阻开关特性

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

ZnO/BiFeO3/ZnO multilayer was fabricated on silicon (Si) substrate by radio-frequency magnetron sputtering system. The resistive switching characteristics in ZnO/BiFeO3/ZnO devices are observed, and the resistive switching behavior can be modulated by white light.

机译：通过射频磁控溅射系统在硅（Si）衬底上制备了ZnO / BiFeO3 / ZnO多层膜。观察到ZnO / BiFeO3 / ZnO器件中的电阻切换特性，并且可以通过白光来调制电阻切换行为。

著录项

来源
《Solid-State Electronics》 |2018年第7期|46-48|共3页
作者
Liang Dandan; Li Xiaoping; Wang Junshuai; Wu Liangchen; Chen Peng;
展开▼
作者单位

Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;

Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;

Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;

Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;

Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Resistive switching; ZnO/BiFeO3/ZnO; Light-controlled;

机译：电阻开关;ZnO / BiFeO3 / ZnO;光控;

相似文献

外文文献
中文文献
专利

1. Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications [J] . Zhi-Peng Wu, Jun Zhu, Li-Bin Fang 电子科技学刊：英文版 . 2017,第004期

机译：柔性存储应用中Al2O3 / ZnO双层薄膜的电阻转换特性
2. The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnO_xS_1-x Thin Films on Plastic [J] . Han Yong, Cho Kyoungah, Park Sukhyung, Transactions on Electrical and Electronic Materials . 2014,第1期

机译：Mn掺杂和电极材料对塑料上ZnO _{x S _{1-x 薄膜电阻转换特性的影响}}
3. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition [J] . Zhang Jian, Yang Hui, Zhang Qi-long, Applied Physics Letters . 2013,第1期

机译：等离子体增强原子层沉积法低温生长ZnO薄膜的双极电阻转换特性
4. Investigation on resistive switching characteristics of ZnO thin film [C] . Min. Wei, Fan Yang, Chunfu Li, Nanoepitaxy: Materials and devices VI . 2014

机译：ZnO薄膜的电阻开关特性研究
5. Analysis of the Temperature Dependent Band-edge Distribution as a Function of Annealing in ZnO and ZnO-Based Thin Film Alloys [D] . Canul, Amrah. 2020

机译：ZnO和ZnO基薄膜合金退火的函数的温度依赖带边缘分布分析
6. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering [O] . Xiaofeng Zhao, Yi Li, Chunpeng Ai, 2019

机译：磁控溅射锂掺杂ZnO薄膜的电阻开关特性
7. Bi-stable resistive switching characteristics in Ti-doped ZnO thin films [O] . Adnan Younis, Dewei Chu, Sean Li 2013

机译：掺钛ZnO薄膜的双稳态阻变特性

Light-controlled resistive switching characteristics in ZnO/BiFeO_3/ZnO thin film

摘要

著录项

相似文献

相关主题

期刊订阅