Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

Jian Li-Yi; Lee Hsin-Ying; Lin Yung-Hao; Lee Ching-Ting

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Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

机译：两指堆叠鳍状五元铟镓锌铝氧化物薄膜晶体管的性能

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The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.

机译：制造了两指堆叠的底栅和顶栅鳍铟镓锌铝氧化物薄膜晶体管（IGZAO TFT）。由于底部感应沟道层和顶部感应沟道层是同时使用底部栅极和顶部栅极形成在堆叠的TFT中的。因此，堆叠的TFT的漏极-源极电流和跨导被增强为底栅TFT和顶栅TFT的漏极和跨导的两倍。当整个沟道层被诱导为载流子传输路径时，可以获得堆叠式TFT的最佳性能。

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来源
《Solid-State Electronics》 |2018年第7期|54-57|共4页
作者
Jian Li-Yi; Lee Hsin-Ying; Lin Yung-Hao; Lee Ching-Ting;
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作者单位

Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan;

Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan;

Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan;

Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan|Yuan Ze Univ, Dept Photon Engn, Taoyaun 320, Taiwan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Induced channel layer; Quinary indium gallium zinc aluminum oxide materials; Stacked fin thin-film transistors;

机译：感应沟道层;铟镓镓锌氧化铝材料;堆叠鳍式薄膜晶体管;

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Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

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