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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT

机译：全电离剂量辐射对土光电性能的实验研究

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摘要

In this paper, the experimental investigation on the electrical properties of silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) after total-ionizing-dose (TID) irradiation is presented. We find that the TID irradiation reduces the threshold voltage (V-th), and increases the collector current (I-CE) at the same gate voltage (V-g). The raising I-CE is mainly attributed to the negative shift of the Vth. However, at the same overdrive voltage (V-ov = V-g - V-th), the I-CE at small V-CE increases and the I-CE at high V-CE decreases after irradiation. The distinctive response of the out-put characteristics after irradiation is ascribed to the positive trapped charges in the field oxide (FOX) layer and the buried oxide (BOX) layer. The inimitable out-put behavior occurs at whatever the sign of the gate bias voltage during irradiation. The degradation mechanisms of the TID effects on the SOI-LIGBT are further analyzed and confirmed by simulation.
机译：本文介绍了在全电离剂量（TID）照射后硅与绝缘体横向绝缘栅双极晶体管（SOI-LIGBT）电性能的实验研究。我们发现TID照射减少了阈值电压（V-TH），并增加相同栅极电压（V-G）处的集电极电流（I-CE）。升高I-CE主要归因于VTH的负面偏移。然而，在相同的过驱动电压（V-OV = V-G - V-Th）处，在照射后，小V-Ce的I-Ce增加，I-Ce在高V-Ce下降。照射后的输出特性的独特反应归因于诸如氧化物（Fox）层和掩埋氧化物（盒）层中的正捕获电荷。无论栅极偏置电压在照射期间的符号是否发生了不懈的出口行为。通过模拟进一步分析并确认了对SOI-LIGBT的TID效应的降解机制。

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  • 来源
    《Solid-State Electronics》 |2021年第1期|107952.1-107952.7|共7页
  • 作者

    Yang Guangan; Wu Wangran; Zhang Xingyao; Tang Pengyu; Yang Jing; Zhang Long; Liu Siyang; Sun Weifeng;

  • 作者单位

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Chinese Acad Sci Xinjiang Tech Inst Phys & Chem Key Lab Funct Mat & Devices Special Environm Urumqi 830011 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    SOI-LIGBT; Total-ionizing-dose; Radiation; Degradation;

    机译：SOI-LIGBT;全电离剂量;辐射;降解;

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