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A fast small signal modeling method for GaN HEMTs

机译：GaN Hemts的快速小信号建模方法

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摘要

An accurate and efficient parasitic parameter extraction method is proposed for gallium nitride (GaN) high electron-mobility transistors (HEMTs). In this letter, a 19-element small signal equivalent circuit model is established to describe the characteristics of the device precisely. The simulation of the high frequency behavior is improved by introducing the series parasitic inductances into the cold pinch-off model. Through matrix transformation and equation derivation, the influence of Cpda and Cpga on parameter extraction is evaluated. It is proved that the error caused by Cpga and Cpda to the parameter extraction is less than 3%. Ignoring these influences can not only simplify parameter calculation, but also ensure its accuracy. The parasitic capacitances and parasitic inductances can be obtained simultaneously, improving the efficiency and the accuracy of parameter extraction. Meanwhile, accurate and ideal initial values are provided for the subsequent parameter optimization. Because of the accuracy of the initial values, parameter optimization eliminates the error caused by previous steps, and does not need multiple iterations, which improves the efficiency of the model parameter extraction. Compared with the traditional extraction method, the method in this letter can fast and accurately obtain the values of parameters. The simulated results show good agreement of scattering parameters up to 40 GHz.
机译：提出了一种用于氮化镓（GaN）高电子 - 迁移率晶体管（HEMT）的准确和有效的寄生参数提取方法。在这封信中，建立了一个19元件的小信号等效电路模型，精确地描述了设备的特性。通过将串联寄生电感引入冷捏 - 关闭模型来改善高频行为的模拟。通过矩阵变换和等式衍生，评估CPDA和CPGA对参数提取的影响。事实证明，CPGA和CPDA对参数提取引起的误差小于3％。忽略这些影响不仅可以简化参数计算，还可以确保其准确性。可以同时获得寄生电容和寄生电感，提高参数提取的效率和准确性。同时，为后续参数优化提供了准确和理想的初始值。由于初始值的准确性，参数优化消除了先前步骤引起的错误，并且不需要多个迭代，这提高了模型参数提取的效率。与传统的提取方法相比，这封信中的方法可以快速准确地获得参数的值。模拟结果表明散射参数良好的矛盾，最高可达40 GHz。

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  • 来源
    《Solid-State Electronics》 |2021年第1期|107946.1-107946.8|共8页
  • 作者

    Zhao Ziyue; Lu Yang; Yi Chupeng; Chen Yilin; Cai Xiaolong; Zhang Yu; Duan Xiangyang; Ma Xiaohua; Hao Yue;

  • 作者单位

    Xidian Univ Key Lab Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;

    Xidian Univ Key Lab Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;

    Xidian Univ Key Lab Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;

    Xidian Univ Key Lab Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;

    State Key Lab Mobile Network & Mobile Multimedia Shenzhen 518057 Peoples R China|ZTE Corp Shenzhen 518057 Peoples R China;

    ZTE Corp Shenzhen 518057 Peoples R China;

    ZTE Corp Shenzhen 518057 Peoples R China;

    Xidian Univ Key Lab Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;

    Xidian Univ Key Lab Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN HEMT; Small-signal model; Parasitic inductances; Extraction method;

    机译：GaN HEMT;小信号模型;寄生电感;提取方法;

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