Large-Signal Modeling Methodology for GaN HEMTs for RF Switching-Mode Power Amplifiers Design

著录项

• 来源
  《International journal of RF and microwave computer-aided engineering》 |2011年第1期|p.45-51|共7页
• 作者

  Anwar Jarndal; Pouya Aflaki; Renato Negra; Ammar B. Kouki; Fadhel M. Ghannouchi;

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• 作者单位

  Computer Engineering Department, Hodeidah University, Hodeidah 3114, Yemen;

  iRadio Lab, ECE Department, University of Calgary, Calgary, AB, Canada;

  UMIC Research Centre, RWTH Aachen University, Aachen, Germany;

  Ecole de technologie superieure, Montreal, Quebec H3C 1K3, Canada;

  iRadio Lab, ECE Department, University of Calgary, Calgary, AB, Canada;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  GaN HEMT; large-signal modeling; table-based method; switching-mode power amplifier;

  机译：GaN HEMT;大信号建模;基于表的方法;开关模式功率放大器;