We studied magnetotransport properties of a single electron transistor (SET) consist of Ni/ NiO/Co ultrasmall tunnel junctions. At high temperatures or at high bias conditions, the SET shows Magnetoresistance (MR) of about 4/100 which originates from the magnetic valve effect. To investigate The magnetic valve effect in Coulomb blockade regime, we measured the zero-bias MR of the SET for On-state (resistance minimum of Coulomb oscillations) and off-state (resistance maximum of them) as a Function of temperature.
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