A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

著录项

• 来源
  《Solid-State Electronics》 |2017年第11期|10-15|共6页
• 作者

  Chien Feng-Tso; Chen Jian-Liang; Chen Chien-Ming; Chen Chii-Wen; Cheng Ching-Hwa; Chiu Hsien-Chin;

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• 作者单位

  Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan;

  Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan;

  Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan;

  Minghsin Univ Sci & Technol, Dept Elect Engn, Hsinchu 304, Taiwan;

  Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan;

  Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Poly-Si TFTs; Kink effect; Gate-overlapped light doping drain (GOLDD);

  机译：多晶硅TFT;扭结效应;栅极重叠的轻掺杂漏极（GOLD）;