Analysis of temperature dependent hysteresis in MoS_2 field effect transistors for high frequency applications

著录项

• 来源
  《Solid-State Electronics》 |2014年第1期|87-90|共4页
• 作者

  P.B. Shah; M. Amani; M.L. Chin; T.P. ORegan; F.J. Crowne; M. Dubey;

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• 作者单位

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD 20783, United States;

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD 20783, United States;

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD 20783, United States;

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD 20783, United States;

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD 20783, United States;

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD 20783, United States;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Transistor; MoS_2; Hysteresis;

  机译：晶体管;MoS_2;磁滞现象;