A manufacturable process integration approach for graphene devices

著录项

• 来源
  《Solid-State Electronics》 |2013年第6期|185-190|共6页
• 作者

  Sam Vaziri; Grzegorz Lupina; Alan Paussa; Anderson D. Smith; Christoph Henkel; Gunther Lippert; Jarek Dabrowski; Wolfgang Mehr; Mikael OEstling; Max C. Lemme;

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• 作者单位

  KTH Royal Institute of Technology, School of Information and Communication Technology, Isafjordsgatan 22, 16440 Kista, Sweden;

  IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

  DIEGM, University of Udine, Via delle Scienze 206, 33100 Udine, Italy;

  KTH Royal Institute of Technology, School of Information and Communication Technology, Isafjordsgatan 22, 16440 Kista, Sweden;

  KTH Royal Institute of Technology, School of Information and Communication Technology, Isafjordsgatan 22, 16440 Kista, Sweden;

  IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

  IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

  IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

  KTH Royal Institute of Technology, School of Information and Communication Technology, Isafjordsgatan 22, 16440 Kista, Sweden;

  KTH Royal Institute of Technology, School of Information and Communication Technology, Isafjordsgatan 22, 16440 Kista, Sweden ,University of Siegen, Hoelderlinstr. 3, 57076 Siegen, Germany;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Graphene; Transistors; Process integration; Hot electrons; Quantum capacitance; Dielectric breakdown;

  机译：石墨烯晶体管;流程整合;热电子;量子电容介电击穿;