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RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study

机译：纳米级MOSFET中的RTN和BTI：全面的统计模拟研究

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This paper presents a thorough statistical investigation of random telegraph noise (RTN) and bias temperature instabilities (BTIs) in nanoscale MOSFETs. By means of 3D TCAD 'atomistic' simulations, we evaluate the statistical distribution in capture/emission time constants and in threshold voltage shift (△V_T) amplitudes due to single trapped charge, comparing its impact on RTN and BTI. Our analysis shows that the individual BTI △V_T steps are distributed identically as the RTN △V_T steps. However, the individual traps in a device cannot be considered as uncorrelated sources of noise because their mutual interaction is fundamental in determining the dispersion of capture/emission time constants in BTI simulation. Further, we show that devices strongly affected by RTN are not necessarily strongly affected by BTI (and vice versa), revealing the uncorrelated nature of these two reliability issues. The presented results are of utmost importance for profoundly understanding the differences and similarities in the statistical behavior of RTN and BTI phenomena and assisting a reliability-aware circuit design.
机译：本文对纳米级MOSFET中的随机电报噪声（RTN）和偏置温度不稳定性（BTI）进行了全面的统计研究。通过3D TCAD的“原子”模拟，我们评估了捕获/发射时间常数和阈值电压偏移（△V_T）幅度（由于单个俘获电荷）的统计分布，比较了其对RTN和BTI的影响。我们的分析表明，各个BTI△V_T步的分布与RTN△V_T步的分布相同。但是，不能将设备中的单个陷阱视为不相关的噪声源，因为它们的相互作用是确定BTI仿真中捕获/发射时间常数的离散度的基础。此外，我们显示受RTN强烈影响的设备不一定受BTI强烈影响（反之亦然），这揭示了这两个可靠性问题的不相关性质。所呈现的结果对于深刻理解RTN和BTI现象的统计行为的异同和协助可靠性感知电路​​设计至关重要。

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