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首页> 外文期刊>Solid-State Electronics >Impact ionization induced dynamic floating body effect in junctionless transistors
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Impact ionization induced dynamic floating body effect in junctionless transistors

机译:无结晶体管中的碰撞电离诱导的动态浮体效应

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摘要

Subthreshold Swings, SSs, smaller than theoretical 'ln(10)kT/q' are observed in nanowire junctionless (JL) and inversion mode (IM) MuGFETs. The low SS is attributed to the floating body effect in the channel, which is initiated by impact ionization. Comparing with IM devices, decreased drain voltage (V_d) is required for the generation of steep subthreshold slopes in JL devices and the floating body is relatively dynamic. In both JL and IM MuGFETs the floating body effect is suppressed for narrow devices, which indicates this effect is geometry dependent. Moreover, it shows that the short channel JL devices with enhanced electric field can exhibit steep subthreshold slopes at lower V_d. It gives another option to decrease the supply voltage (V_(dd)) for low power applications of JL devices.
机译:在纳米线无结(JL)和反转模式(IM)MuGFET中观察到小于理论'ln(10)kT / q'的亚阈值摆幅SS。低SS归因于通道中的浮体效应,这是由碰撞电离引发的。与IM器件相比,在JL器件中产生陡峭的亚阈值斜率要求降低漏极电压(V_d),并且浮体相对动态。在JL和IM MuGFET中,对于狭窄的器件,浮体效应均得到抑制,这表明该效应与几何形状有关。此外,它表明具有增强电场的短通道JL器件可以在较低的V_d处呈现陡峭的亚阈值斜率。对于JL器件的低功耗应用,它还提供了降低电源电压(V_(dd))的另一种选择。

著录项

  • 来源
    《Solid-State Electronics》 |2013年第12期|28-33|共6页
  • 作者单位

    Tyndall National Institute, University College Cork, Lee Mattings, Cork, Ireland;

    Lashkaryov Institute of Semiconductor Physics, NASU, Kiev, Ukraine;

    Lashkaryov Institute of Semiconductor Physics, NASU, Kiev, Ukraine;

    Tyndall National Institute, University College Cork, Lee Mattings, Cork, Ireland;

    Tyndall National Institute, University College Cork, Lee Mattings, Cork, Ireland;

    Tyndall National Institute, University College Cork, Lee Mattings, Cork, Ireland;

    Tyndall National Institute, University College Cork, Lee Mattings, Cork, Ireland;

    Department of Electrical Engineering, Indian Institute of Technology (IIT), Indore, India;

    Tyndall National Institute, University College Cork, Lee Mattings, Cork, Ireland;

    Department of Electrical Engineering, Indian Institute of Technology (IIT), Indore, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Impact ionization; Dynamic floating body effect; Junctionless; Sub-60 mV/dec subthreshold slope;

    机译:碰撞电离;动态浮体效果;无结低于60 mV / dec的亚阈值斜率;

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