...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid-State Electronics >Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors
【24h】

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

机译：完全耗尽的纳米ZnO薄膜晶体管的迁移行为和模型

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Transport mechanisms in nanocrystalline ZnO Thin Film Transistors (TFT) were investigated in a wide temperature range. The channel is located at the ZnO-SiO_2 interface and controlled with a bottom gate as in a back-channel SOI MOSFET. In this work, we propose suitable mobility models that are able to provide a good agreement with the experimental results. Not only do these models account for the regular carrier transport mechanisms but they also address the physical properties of nanocrystalline ZnO films including the effect of grain boundaries. Simple parameter extraction techniques are explored and validated with numerical calculations. Our work highlights that nanocrystalline ZnO TFT provides high mobility, low threshold voltage and reasonable subthreshold swing due to good interface quality between the ZnO film and the gate insulator. The variation of these parameters at low temperature is measured and compared to the typical behavior in SOI MOSFETs.
机译：在较宽的温度范围内研究了纳米晶ZnO薄膜晶体管（TFT）中的传输机理。该沟道位于ZnO-SiO_2界面，并由底栅控制，就像在反向沟道SOI MOSFET中一样。在这项工作中，我们提出了合适的流动性模型，能够与实验结果很好地吻合。这些模型不仅考虑了常规的载流子传输机制，而且还解决了纳米晶ZnO薄膜的物理特性，包括晶界的影响。探索了简单的参数提取技术，并通过数值计算对其进行了验证。我们的工作强调，由于ZnO薄膜和栅绝缘体之间的良好界面质量，纳米ZnO TFT提供了高迁移率，低阈值电压和合理的亚阈值摆幅。测量这些参数在低温下的变化，并将其与SOI MOSFET中的典型行为进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号