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Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

机译：优化前后偏置以在UTBOX FBRAM中获得最佳感测裕度和保留时间

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摘要

This paper investigates the front and back gate bias influence on current sense margin and retention time in Ultra-Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FDSOI) devices used as a FBRAM (floating body random access memory) cell through simulations and experimental results. This work aims to gain insight into the mechanisms involved into FBRAM operation and optimize the front and back gate biases for achieving the best retention time and current sense margin. The writing '1', through BJT effect, and writing '0', by using capacitive coupling, were verified. We demonstrated that, during the holding, the operation mode of the interfaces is an important factor for the best condition for achieving both a higher current sense margin and a longer retention time, which should be with the front gate in accumulation mode and the back gate in depletion mode. It was also observed that depending on gate bias applied during the hold operation, there are two mechanisms involved in retention time. For less negative gate voltage the retention time is limited by recombination, whereas for more negative gate voltage the generation mechanisms take place. Moreover, the retention time showed more sensitivity to the back gate voltage than the current sense margin.
机译：本文通过仿真研究了前栅极和背栅极偏压对用作FBRAM（浮体随机存取存储器）单元的超薄埋氧化物（UTBOX）完全耗尽绝缘体上硅（FDSOI）器件中电流感测余量和保留时间的影响。实验结果。这项工作旨在深入了解FBRAM操作所涉及的机制，并优化前后栅极偏置，以实现最佳的保持时间和电流检测裕度。通过BJT效应写入'1'，并通过电容耦合写入'0'。我们证明，在保持期间，接口的工作模式是实现更高电流感测裕度和更长保留时间的最佳条件的重要因素，前栅极应处于累积模式，而后栅极则应如此在耗尽模式下。还观察到，根据保持操作期间施加的栅极偏置，保持时间涉及两种机制。对于较小的负栅极电压，保留时间受复合限制，而对于较大的负栅极电压，则发生机制。此外，保留时间比电流检测裕度对后栅极电压的灵敏度更高。

著录项

  • 来源
    《Solid-State Electronics》 |2013年第12期|149-154|共6页
  • 作者

    Luciano Mendes Almeida; Katia Regina Akemi Sasaki; Christian Caillat; Marc Aoulaiche; Nadine Collaert; Malgorzata Jurczak; Eddy Simoen; Cor Claeys; Joao Antonio Martino;

  • 作者单位

    LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, no. 158, 05508-010 Sao Paulo, Brazil;

    LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, no. 158, 05508-010 Sao Paulo, Brazil;

    Micron Technology Belgium, Kapeldreef 75, B-3001 Leuven, Belgium;

    Imec Kapeldreef 75, B-3011 Leuven, Belgium;

    Imec Kapeldreef 75, B-3011 Leuven, Belgium;

    Imec Kapeldreef 75, B-3011 Leuven, Belgium;

    Imec Kapeldreef 75, B-3011 Leuven, Belgium;

    Imec Kapeldreef 75, B-3011 Leuven, Belgium,EE Departament Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

    LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, no. 158, 05508-010 Sao Paulo, Brazil;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    UTBOX; SOI; BJT; FBRAM; Retention time; Current sense margin;

    机译：UTBOX;所以我;北京交通大学;FBRAM;保留时间;电流感测裕度;

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