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Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

机译:柔性电子塑料上SOI技术的射频和低噪声特性

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摘要

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f_T/f_(MAX) amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NF_(min)/G_(ass) of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n- and p-MOSFETs, respectively.
机译:在这项工作中,我们报告了将65 nm SOI-CMOS技术转移到塑料薄膜上的HF性能和噪声特性。在转移键合到薄的柔性衬底上之后,RF-SOI-MOSFET具有高单位电流增益截止特性,最大振荡频率f_T / f_(MAX)对于n型和100/130而言总计为150/160 GHz GHz分别为p型。对于n和p-MOSFET,在10 GHz时分别测得最小噪声系数和相关增益NF_(min)/ G_(ass)为0.57 dB / 17.8 dB和0.57 dB / 17.0 dB。

著录项

  • 来源
    《Solid-State Electronics》 |2013年第12期|73-78|共6页
  • 作者单位

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

    STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France;

    STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France,CEA-LFTJ, 17 rue des Martyrs, F-38054 Grenoble, France;

    IEMN-CNRS, Avenue Poincare, F-59652 Villeneuve d'Ascq, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Flexible electronics; Ultrathin chips; SOI technology; CMOS; Millimetre waves;

    机译:柔性电子;超薄芯片;SOI技术;CMOS;毫米波;

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