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首页> 外文期刊>Solid-State Electronics >Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates
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Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates

机译：在标准和45°旋转基板上制造的n型三栅极FinFET的低频噪声

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摘要

This paper studies the impact of the 45° substrate rotation on the low-frequency noise (LFN) of triple gate nFinFETs. The overall LFN has been extracted for both standard and 45° substrate rotated devices of several fin widths at different drain and gate voltage biases focusing on their operation in saturation regime. A general view of the mechanisms which govern the low-frequency noise in MOS devices is provided and a brief discussion on the physical origins of the LFN in the evaluated devices is carried out. It has been noted that the LFN in non-rotated (0° rotated) and 45° rotated devices operating in the linear regime shows 1/f behavior independent on the gate bias, whereas in the saturation regime both l/f and Lorentz-ian (1/f~2) noises are observed. The former one prevails at lower frequencies and the 1/f~2 noise at higher ones. In this case, the corner frequency shows an exponential dependence on the gate bias.
机译：本文研究了45°衬底旋转对三栅极nFinFET的低频噪声（LFN）的影响。对于在不同的漏极和栅极电压偏置下具有几个鳍片宽度的标准和45°衬底旋转器件，都提取了总体LFN，重点是它们在饱和状态下的操作。提供了控制MOS器件中低频噪声的机制的一般视图，并对受评估器件中LFN的物理起源进行了简要讨论。已经注意到，在线性状态下工作的非旋转（旋转0°）和45°旋转设备中的LFN表现出1 / f的行为与栅极偏置无关，而在饱和状态下，l / f和洛伦兹ian观察到（1 / f〜2）噪音。前者在较低频率下占优势，而1 / f〜2噪声在较高频率下占优势。在这种情况下，转折频率显示出对栅极偏置的指数依赖性。

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  • 来源
    《Solid-State Electronics》 |2013年第12期|121-126|共6页
  • 作者

    Rodrigo Trevisoli Doria; Joao Antonio Martino; Eddy Simoen; or Claeys; Marcelo Antonio Pavanello;

  • 作者单位

    Department of Electrical Engineering, Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, CEP 09850-901 Sao Bernardo do Campo, Brazil;

    LSI/PSI/USP, University of Sao Paulo, Av. Professor Luciano Cualberto, trav. 3, n. 158, 05508-010 Sao Paulo, Brazil;

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium,E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

    Department of Electrical Engineering, Centro Universitario da FEI, Av. Humberto de Alencar Castelo Branco, 3972, CEP 09850-901 Sao Bernardo do Campo, Brazil;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon-on-insulator; FinFET; Low-frequency noise; 1/f Noise; Lorentzian noise;

    机译：绝缘体上硅FinFET;低频噪声;1 / f噪音;洛伦兹噪声;

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