Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

著录项

• 来源
  《Solid-State Electronics》 |2010年第3期|279-282|共4页
• 作者

  Li-Yang Chen; Shiou-Ying Cheng; Chien-Chang Huang; Tzu-Pin Chen; Tsung-Han Tsai; Yi-Jung Liu; Tai-You Chen; Chi-Hsiang Hsu; Wen-Chau Liu;

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• 作者单位

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Department of Electronic Engineering, National Ilan University, No. 1, Sec. 1, Shen-Lung Road, I-Lan 26041, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  ohmic-recess (OR); non-annealed (NA);

  机译：欧姆凹（OR）;非退火（NA）;