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Modelling of strained-Si/SiGe NMOS transistors including DC self-heating

机译：包括直流自热在内的应变Si / SiGe NMOS晶体管的建模

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摘要

In this paper, a new model of surface-channel strained-Si/SiGe NMOSFETs is derived based on the extension of non-quasi-static (NQS) circuit model developed previously for bulk-Si devices. Basic equations of the NQS MOS model have been modified to account for new physical parameters of strained-Si and relaxed-SiGe layers. In addition, the device steady-state self-heating is efficiently included without employing the thermal-flow analog auxiliary sub-circuits. From the comparisons of modelling results with numerical simulations and measurements, it is shown that a modified NQS MOS including steady-state self-heating can accurately predict the DC characteristics of strained-Si/SiGe NMOSFETs.
机译：本文基于先前为体硅器件开发的非准静态（NQS）电路模型的扩展，推导了一种新的表面沟道应变Si / SiGe NMOSFET模型。已修改NQS MOS模型的基本方程，以说明应变Si和弛豫SiGe层的新物理参数。另外，在不采用热流模拟辅助子电路的情况下，可以有效地包括器件稳态自发热。通过将建模结果与数值模拟和测量结果进行比较，可以看出，包括稳态自热的改进型NQS MOS可以准确预测应变Si / SiGe NMOSFET的直流特性。

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