Analytical model of drain current of strained-Si/strained-Si_(1-Y)Ge_Y/relaxed-Si_(1-X)Ge_X NMOSFETs and PMOSFETs for circuit simulation

B. Bindu; Nandita DasGupta; Amitava DasGupta

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Analytical model of drain current of strained-Si/strained-Si_(1-Y)Ge_Y/relaxed-Si_(1-X)Ge_X NMOSFETs and PMOSFETs for circuit simulation

机译：应变硅/应变硅_（1-Y）Ge_Y /松弛硅_（1-X）Ge_X的漏极电流分析模型用于电路仿真的NMOSFET和PMOSFET

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摘要

Analytical models of drain current of strained-Si/strained-Si_(1-Y)Ge_Y/relaxed-Si_(1-X)Ge_X(X < Y) n-channel and p-channel MOSFETs are presented. The field-dependent mobility variations and velocity saturation of carriers are taken into account in these models. The drain current model of p-channel MOSFET considers carrier transport at the top heterointerface in SiGe as well as at the Si/SiO_2 interface. These models have been implemented in SABER, a circuit simulator. The results from the models show excellent agreement with experimental data.

机译：提出了应变硅/应变硅_（1-Y）Ge_Y /松弛硅_（1-X）Ge_X（X

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来源
《Solid-State Electronics》 |2006年第3期|p.448-455|共8页
作者
B. Bindu; Nandita DasGupta; Amitava DasGupta;
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作者单位

Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600 036, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
strained-Si MOSFETs; HFETs; SiGe; analytical model; circuit simulation;

机译：应变硅MOSFET;HFET;SiGe;分析模型;电路仿真;

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专利

1. Improved thermal stability and hole mobilities in a strained-Si/strained-Si_(1-y)Ge_y/strained-Si heterostructure grown on a relaxed Si_(1-x)Ge_x buffer [J] . Saurabh Gupta, Minjoo L. Lee, David M. Isaacson, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2005,第Dec期

机译：在松弛的Si_（1-x）Ge_x缓冲层上生长的应变硅/应变硅（1-y）Ge_y /应变硅异质结构中改善了热稳定性和空穴迁移率
2. Improved hole mobilities and thermal stability in a strained-Si/ strained-Si_(1-y)Ge_y/strained-Si heterostructure grown on a relaxed Si_(1-x)Ge_x buffer [J] . Saurabh Gupta, Minjoo L. Lee, Eugene A. Fitzgerald Applied Physics Letters . 2005,第19期

机译：在松弛的Si_（1-x）Ge_x缓冲层上生长的应变硅/应变硅（1-y）Ge_y /应变硅异质结构中改善了空穴迁移率和热稳定性
3. TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_(1-x)Ge_x Dual Channel pMOSFETs on (001) Relaxed Si_(1-y)Ge_y [J] . CD. NGUYEN, A.T. PHAM, C. JUNGEMANN, Journal of Computational Electronics . 2004,第3a4期

机译：（001）张弛Si_（1-y）Ge_y上的应变Si /应变Si_（1-x）Ge_x双通道pMOSFET的沟道电荷的TCAD准备密度梯度计算
4. Analytical threshold voltage models for strained Si/strained Si_(1-x)Ge_x/relaxd Si_(1-y)Ge_y PMOSFET [C] . Shanshan Qin, Heming Zhang, Huiyong Hu, International Conference on Mechanical and Aerospace Engineering . 2012

机译：应变Si /应变Si_（1-x）Ge_x / RelaxD Si_（1-Y）Ge_y PMOSFET的分析阈值电压模型
5. Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect. [D] . Moradi, Maziar. 2010

机译：结合虚拟栅极和转移电子效应的影响，对AlGaN / GaN HFET的漏极电流特性进行分析建模。
6. Modeling and Simulation of a Novel Piezo-Motor Based on Piezoelectric Properties of Pb(1-x)Srx(Ti0,48Zr0,52)(1-y)NbyO3 Ceramics [O] . Lucian Pîslaru-Dănescu, Ion Fuiorea, Alina Dumitru, 2019

机译：基于PB（1-X）SRX（Ti0,48ZR0,52）（1-Y）NBYO3陶瓷的压电性能的新型压电性的建模与仿真

Analytical model of drain current of strained-Si/strained-Si_(1-Y)Ge_Y/relaxed-Si_(1-X)Ge_X NMOSFETs and PMOSFETs for circuit simulation

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