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首页> 外文期刊>Solid-State Electronics >Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing
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Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing

机译：用于大面积和高质量TFT-LCD开发和制造的多晶硅TFT-LCD像素闪烁的电学模拟

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摘要

In this paper, we present a new flicker evaluation model through the electrical simulation of the optical flicker phenomena in different kinds of poly-Si TFT-LCD arrays for the development and manufacturing of large-area and high-quality TFT-LCDs. We applied our flicker evaluation model to three different types of TFTs; excimer laser annealed (ELA) poly-Si TFT, silicide mediated crystallization (SMC) poly-Si TFT, and counter-doped lateral body terminal (LBT) poly-Si TFT. We compared the flicker quantitatively for these three different TFT-LCDs on 40 in. UXGA scale. We identified three major factors causing the flicker such as charging time, kickback voltage and leakage current, analyzed their relative contributions to the flicker, and evaluated the values of the flicker in decibel (dB) for the three different TFT-LCD arrays. In addition, we show that the flicker is very sensitive to the low-level (minimum) gate voltage due to the large leakage current of the poly-Si TFT, and the low-level gate voltage should be chosen carefully to minimize the flicker.
机译：在本文中，我们通过对不同种类的多晶硅TFT-LCD阵列中的光学闪烁现象进行电模拟，提出了一种新的闪烁评估模型，用于开发和制造大面积和高质量的TFT-LCD。我们将闪烁评估模型应用于三种不同类型的TFT。准分子激光退火（ELA）多晶硅TFT，硅化物介导的结晶（SMC）多晶硅TFT和反向掺杂的侧面体端子（LBT）多晶硅TFT。我们在UXGA规模上定量比较了这三种不同的TFT-LCD的闪烁。我们确定了导致闪烁的三个主要因素，例如充电时间，反冲电压和泄漏电流，分析了它们对闪烁的相对影响，并评估了三种不同的TFT-LCD阵列的闪烁值，以分贝（dB）为单位。此外，由于多晶硅TFT的漏电流较大，我们表明闪烁对低电平（最小）栅极电压非常敏感，应谨慎选择低电平栅极电压以最大程度地减少闪烁。

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