Response to 'Comment on 'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'' [Solid State Electron. 2004;48:335-8]

M. Tao; J. Zhu

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Response to 'Comment on 'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'' [Solid State Electron. 2004;48:335-8]

机译：对“针对低电阻欧姆接触的钛和n型Si（001）之间的负肖特基势垒的评论”的响应[固态电子。 2004; 48：335-8]

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The measurement of a negative or low Schottky barrier is complicated by several factors, including series resistance. With these factors in mind and additional experimental results, we reaffirm that the barrier height between Ti and Se-passivated n-type Si(001) is negative or nearly negative.

机译：负或低肖特基势垒的测量受多个因素的影响，包括串联电阻。考虑到这些因素和其他实验结果，我们重申Ti和Se钝化的n型Si（001）之间的势垒高度为负或接近负。

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来源
《Solid-State Electronics》 |2004年第12期|p.2351-2352|共2页
作者
M. Tao; J. Zhu;
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作者单位

Department of Electrical Engineering and NanoFAB Center, University of Texas at Arlington, P.O. Box 19072, Arlington, TX 76019, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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专利

1. Comment on 'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts' [J] . J. Osvald Solid-State Electronics . 2004,第12期

机译：关于“钛与低电阻欧姆接触的n型Si（001）之间的负肖特基势垒”的评论
2. Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts [J] . M. Tao, D. Udeshi, S. Agarwal, Solid-State Electronics . 2004,第2期

机译：钛与n型Si（0 0 1）之间的负肖特基势垒，用于低电阻欧姆接触
3. Au/N-type Si Schottky-barrier contact and oxidation kinetics in Au-contaminated and thermally oxidized N-type Si (001) surfaces [J] . Shimizu H, Wakashima H, Shimada S, Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2008,第3a4期

机译：Au / N型Si肖特基势垒接触和Au污染和热氧化的N型Si（001）表面的氧化动力学
4. Thermal stability of low-resistance ohmic contacts between Ti and Se-passivated n-type Si(001) [C] . D. Udeshi, S. Agarwal, M. Tao ECS Meeting . 2003

机译：Ti和Se钝化的N型Si（001）之间的低电阻欧姆触点的热稳定性
5. Interfacial reactions in nickel/titanium ohmic contacts to N-type silicon carbide. [D] . Park, Jae Hyun. 2003

机译：镍/钛欧姆接触中与N型碳化硅的界面反应。
6. Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices [O] . Shen, L Longfei, Dolores Calzadilla, VM Victor, Wullems, CWHA, 2015

机译：与基于膜的波导器件的n型InP的低光损耗，低电阻的基于Ag / Ge的欧姆接触
7. Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers [R] . Kolawa, E., Nieh, C. W., Flick, W., 1988

机译：具有扩散阻挡层的n-Gaas的稳定的固相欧姆接触

Response to 'Comment on 'Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts'' [Solid State Electron. 2004;48:335-8]

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