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Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

机译:具有扩散阻挡层的n-Gaas的稳定的固相欧姆接触

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Contacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10-6 ohm sq. cm range are achieved. Gallium arsenides, Nickel, Germanium, Gold, Reprints. (mjm)

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