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A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers

机译:具有和不具有TiN扩散阻挡层的n-GaAs欧姆接触的退化活化能的快速评估方法

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摘要

A rapid evaluation method, the temperature ramp method, for GaAs MESFET ohmic contacts is proposed. By use of this method, activation energy for ohmic contact degradation can be obtained using less time and a smaller number of samples than traditional methods, and the results are in agreement with those obtained by traditional methods. In accordance with some drawbacks of traditional AuGeNi-Au ohmic contacts, a new ohmic contacts system with TiN diffusion barrier layer is proposed. Experimental results show that the reliability of ohmic contacts with TiN is greatly superior to that of traditional AuGeNi-Au ohmic contacts.
机译:提出了一种用于GaAs MESFET欧姆接触的快速评估方法,即温度斜坡方法。通过使用该方法,与传统方法相比,可以用更少的时间和更少的样品获得用于欧姆接触降解的活化能,并且结果与通过传统方法获得的结果一致。针对传统的AuGeNi-Au欧姆接触的一些缺点,提出了一种具有TiN扩散势垒层的新型欧姆接触系统。实验结果表明,TiN欧姆接触的可靠性大大优于传统的AuGeNi-Au欧姆接触。

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