...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid-State Electronics >Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers
【24h】

Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers

机译：MOVPE和MBE中生长的1.3μmGaInNAs边缘发射激光器的载流子复合过程

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

By measuring the spontaneous emission (SE) from metal organic vapour phase epitaxy (MOVPE) grown ～1.3 μm GaInNAs/GaAs-based lasers during normal operation, we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 to 370 K and compared these with results previously obtained for molecular beam epitaxy (MBE) grown GaInNAs lasers. From the SE measurements we determine how the current, I, close to threshold, varies as a function of carrier density, n, which enables us to separate out the main current paths corresponding to monomolecular (defect-related), radiative or Auger recombination respectively. We find that at room temperature (RT), defect-related recombination contributes ～360 A/cm~2 (MBE) and ～565 A/cm~2 (MOVPE) to the total current density at threshold. Radiative recombination accounts for ～110 A/cm~2 (MBE) and 195 A/cm~2 (MOVPE) of J_(th) with the remaining ～180 A/cm~2 (MBE) and 760 A/cm~2 (MOVPE) are due to non-radiative Auger recombination. Our results suggest that a larger threshold carrier density in the MOVPE grown device in comparison to the MBE lasers, can reasonably explain the larger current densities of the different recombination processes at RT. We tentatively associate this with higher optical loss processes in the MOVPE grown material.
机译：通过测量在正常操作期间生长约1.3μmGaInNAs / GaAs基激光器的金属有机气相外延（MOVPE）的自发发射（SE），我们定量确定了该器件中存在的每个电流路径随函数的变化温度范围从130到370 K，并将这些结果与以前获得的分子束外延（MBE）生长的GaInNAs激光器的结果进行比较。从SE测量中，我们可以确定电流I（接近阈值）如何随载流子密度n的变化而变化，这使我们能够分离出分别对应于单分子（与缺陷相关），辐射或俄歇复合的主要电流路径。我们发现，在室温（RT）下，与缺陷相关的重组对阈值处的总电流密度贡献了约360 A / cm〜2（MBE）和约565 A / cm〜2（MOVPE）。辐射复合占J_（th）的〜110 A / cm〜2（MBE）和195 A / cm〜2（MOVPE），剩余的〜180 A / cm〜2（MBE）和760 A / cm〜2（ MOVPE）是由于非辐射俄歇重组所致。我们的结果表明，与MBE激光器相比，MOVPE生长的器件中更大的阈值载流子密度可以合理地解释RT下不同重组过程的更大电流密度。我们暂时将此与MOVPE种植材料中较高的光损耗过程联系在一起。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号