MAPPER Lithography tech resolves 22nm

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MAPPER Lithography tech resolves 22nm

机译：MAPPER光刻技术解决了22nm问题

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Research institute CEA-Leti shows "significant progress" with the MAPPER Lithography massively parallel direct write technology, resolving 22nm dense lines and spaces and 22nm dense contact holes in positive chemically amplified resist. The maskless lithography tech meets semiconductor industry requirements for 14nm and 10nm logic nodes.

机译：CEA-Leti研究所通过MAPPER光刻大规模并行直接写入技术显示了“重大进展”，该技术可解决正化学放大型抗蚀剂中22nm密集的线和间隔以及22nm密集的接触孔的问题。无掩模光刻技术可满足14nm和10nm逻辑节点的半导体行业要求。

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《Solid state technology》 |2012年第2期|p.10|共1页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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正文语种 eng
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1. Lithography perspective for the 22nm half-pitch [J] . Stefan Wurm Solid state technology . 2010,第2期

机译：22nm半间距的光刻透视图
2. Sub-100 nm Triangular Nanopores Fabricated with the Reactive Ion Etching Variant of Nanosphere Lithography and Angle-Resolved Nanosphere Lithography [J] . Alyson V.Whitney, BenjaminD.Myers, Richard P.Van Duyne Nano letters . 2004,第8期

机译：纳米球平版印刷和角度分辨纳米球平版印刷的反应离子蚀刻变体制造的低于100 nm的三角形纳米孔
3. Lifting factor maps to resolving maps [J] . Putnam IF Israel Journal of Mathematics . 2005,第0期

机译：提升因子图到解析图
4. 22nm node ArF lithography performance improvement by utilizing mask 3D topography: controlled sidewall angle 22nm node ArF lithography performance improvement by utilizing mask 3D topography: controlled sidewall angle [C] . Hiroshi Watanabe, Kei Mesuda, Katsuya Hayano, Photomask and next-generation lithography mask technology XVIII . 2011

机译：利用掩模3D形貌改善22nm节点ArF光刻性能：可控侧壁角 r n利用掩模3D形貌改善22nm节点ArF光刻性能：可控侧壁角
5. Nanosphere lithography: Angle-resolved deposition, magnetic nanoparticles, and the scanning probe Raman microscope [D] . Smith, Matthew Thomas 1999

机译：纳米球光刻：角分辨沉积，磁性纳米颗粒和扫描探针拉曼显微镜
6. Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources [O] . Kentaro Tomita, Yuta Sato, Syouichi Tsukiyama, -1

机译：极紫外光刻光源的激光产生的锡等离子体的电子密度和温度的时间分辨二维分布
7. Molecular Design of o-Nitrobenzyl Phenol Ether for Photo-deprotection Resist; Challenge to half-pitch 22nm using Near-field Lithography [O] . Toshiki Ito, Akira Terao, Yasuhisa Inao, 2007

机译：O-硝基苄基酚醛乙醚的分子设计，用于光保护抗蚀剂;使用近场光刻挑战半场间距22nm

MAPPER Lithography tech resolves 22nm

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