Laser-Produced Plasma Light Sources for EUV Lithography

DAVID C. BRANDT; IGOR V. FOMENKOV; BRUNO M. LA FONTAINE; MICHAEL J. LERCEL

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Laser-Produced Plasma Light Sources for EUV Lithography

机译：激光产生的等离子光刻用等离子光源

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摘要

Laser-produced plasma (LPP) sources have been developed as the primary approach for EUV lithography for optical imaging of circuit features at sub-22nm design rules. EUV lithography is the front runner for next generation critical dimension imaging after 193nm immersion lithography for critical layer patterning. Leading device manufacturers have taken delivery of first generation EUV scanners in 2011 and are ramping those tools to pilot-line capability in 2012.

机译：激光产生等离子体（LPP）源已被开发为EUV光刻技术的主要方法，用于在22nm以下的设计规则下对电路特征进行光学成像。 EUV光刻技术是在用于关键层图案的193nm浸没式光刻技术之后，下一代关键尺寸成像技术的领先者。领先的设备制造商已在2011年交付了第一代EUV扫描仪，并在2012年将这些工具扩展到了试生产能力。

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来源
《Solid state technology》 |2012年第5期|p.26-28|共3页
作者
DAVID C. BRANDT; IGOR V. FOMENKOV; BRUNO M. LA FONTAINE; MICHAEL J. LERCEL;
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作者单位

Cymer, Inc., San Diego, CA;

MTS Fellou EUV,Cymer, Inc., San Diego, CA;

Cymer, Inc., San Diego, CA;

EUV product marketing, at Cymer, Inc. San Diego, CA,Cymer, Inc., San Diego, CA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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专利

1. Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography [J] . JunichiFujimoto, TsukasaHori, TatsuyaYanagida, Physics Research International . 2012,第4期

机译：用于HVM EUV光刻的激光生产的基于锡等离子体的EUV光源技术的开发
2. Performance results of laser-produced plasma test and prototype light sources for EUV lithography [J] . Norbert R. Böwering Igor V. Fomenkov David C. Brandt Alexander N. Bykanov Alex I. Ershov William N. Partlo David W. Myers Nigel R. Farrar Georgiy O. Vaschenko Oleh V. Khodykin Jerzy R. Hoffman Christopher P. Chrobak Shailendra N. Srivastava Imtiaz Ahmad Chirag Rajyaguru et al. Journal of Micro/Nanolithography,MEMS and MOEMS . 2009,第4期

机译：激光产生的等离子测试和原型光源用于EUV光刻的性能结果
3. Investigation Of Debris Dynamics From Laser-produced Tin Plasma For Euv Lithography Light Source [J] . D, Nakamura, K, Applied Physics A: Materials Science & Processing . 2008,第4期

机译：Euv平版印刷光源激光产生的锡等离子体的碎片动力学研究
4. Development of laser-produced plasma-based EUV light source technology for HVM EUV lithography [C] . Junichi Fujimoto, Hakaru Mizoguchi Conference on extreme ultraviolet (EUV) lithography III . 2012

机译：用于HVM EUV光刻的激光生产的基于等离子体的EUV光源技术的开发
5. Radiation studies of the tin-doped microscopic droplet laser plasma light source specific to EUV lithography. [D] . Koay, Chiew-Seng. 2006

机译：EUV光刻专用的锡掺杂微滴激光等离子体光源的辐射研究。
6. Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources [O] . Kentaro Tomita, Yuta Sato, Syouichi Tsukiyama, -1

机译：极紫外光刻光源的激光产生的锡等离子体的电子密度和温度的时间分辨二维分布
7. Development of EUV Light Source for Optical Lithography by CO₂ Laser-Produced Plasma [O] . 2005

机译：CO _{2 激光产生等离子体光学光刻的EUV光源的研制}
8. Advanced source studies on laser produced plasmas for EUV lithography [R] . Spitzer, R. C. , Gaines, D. P. 1995

机译：用于EUV光刻的激光产生等离子体的高级源研究

Laser-Produced Plasma Light Sources for EUV Lithography

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