Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs

著录项

• 来源
  《Superlattices and microstructures》 |2014年第12期|77-89|共13页
• 作者

  Gopi Krishna Saramekala; Sarvesh Dubey; Pramod Kumar Tiwari;

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• 作者单位

  Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela 769008, India;

  Faculty of Electronics and Communication Engineering, Sriramswaroop Memorial University, Barabanki Road, Lucknow 22003, UP, India;

  Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela 769008, India;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Ultrathin-body (UTB); Fully-depleted (FD) systems-on-a-chip (SOC); Short-channel effects (SCEs); Figures-of-merit (FoM);

  机译：超薄体（UTB）;全耗尽（FD）片上系统（SOC）;短通道效应（SCE）;品质因数（FoM）;