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首页> 外文期刊>Superlattices and microstructures >Efficient ultraviolet photodetector device based on modulated wide band gap Type-Ⅱ CuO/CdSe core-shell nanowires
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Efficient ultraviolet photodetector device based on modulated wide band gap Type-Ⅱ CuO/CdSe core-shell nanowires

机译：基于调制宽带隙Ⅱ型CuO / CdSe核壳纳米线的高效紫外光电探测器

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摘要

A high-performance ultraviolet photodetector has been successfully fabricated based on new CuO/CdSe core-shell nanowires (NWs). The obtained modulated optical band gap due to quantum confinement effect has the capability to detect photons with energies (3.96 eV) significantly larger than the band gap of CuO (1.2 eV) and CdSe (1.7 eV), which is mainly attributed to the abrupt interface between the CuO core and CdSe shell. The fabricated CuO/CdSe core-shell heterostructure NWs as photodetector device showed responsivity 0.63A/W with external quantum efficiency approximately 3.14 x 10(2)% under illumination of wavelength 254 nm. The strong response of CuO/CdSe NWs photodetector is explained by the Type-II band alignment which cause the separation of photo generated electron-hole pairs and their charge transfer at the junction.
机译：基于新型CuO / CdSe核壳纳米线（NWs）的高性能紫外光电探测器已经成功制造。由于量子限制效应而获得的调制光带隙具有检测能量（3.96 eV）显着大于CuO（1.2 eV）和CdSe（1.7 eV）的带隙的光子的能力，这主要归因于突变界面在CuO核和CdSe壳之间。制成的CuO / CdSe核-壳异质结构NWs作为光电探测器，在波长254 nm的照射下，响应度为0.63A / W，外部量子效率约为3.14 x 10（2）％。 CuO / CdSe NWs光电探测器的强响应可以通过II型能带对准来解释，该能带引起光生电子空穴对的分离以及它们在结处的电荷转移。

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