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机译:穿线脱位和点缺陷在GaN的金属半导体 - 金属紫外光探测器性能下的作用
Semiconductor Materials Lab. Raja Ramaima Centre for Advanced Technology Indore 452013 India Homi Bhabha National Institute Training School Complex Anushakti Nagar Mumbai 400094 India;
Semiconductor Materials Lab. Raja Ramaima Centre for Advanced Technology Indore 452013 India;
Semiconductor Materials Lab. Raja Ramaima Centre for Advanced Technology Indore 452013 India;
Semiconductor Materials Lab. Raja Ramaima Centre for Advanced Technology Indore 452013 India;
SCRF Cavity Characterization and Cryogenics Section Raja Ramanna Centre for Advanced Technology Indore 452013 India;
Semiconductor Materials Lab. Raja Ramaima Centre for Advanced Technology Indore 452013 India Homi Bhabha National Institute Training School Complex Anushakti Nagar Mumbai 400094 India;
Threading dislocation; Point defects; Photoresponse; Schottky diode; GaN;
机译:螺纹位错对GaN基金属-半导体-金属紫外光电探测器的影响
机译:通过原位改变在其螺旋脱位上的一维ZnO纳米棒的原位改变改善了背照射GaN基金金属紫外光探测器的性能
机译:螺纹位错对GaN基金属半导体金属紫外光电探测器的影响
机译:低温下GaN基P-I-N光电探测器的特征,MCT / GaN的红外/紫外线双彩色检测器低温及性能
机译:高性能金属-半导体-金属光电探测器和用于光通信的光接收器。
机译:ZnO纳米棒的选择性区域生长和SiO2钝化作用的金属-半导体-金属近紫外(〜380 nm)光电探测器
机译:通过插入超薄界面HfO2层来增强GaN金属-半导体-金属紫外光电探测器的性能