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首页> 外文期刊>AISF BULLETIN OF METROLOGY / 产总研计量标准报告 >Novel CD-SEM calibration reference patterned by EB cell projection lithography
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Novel CD-SEM calibration reference patterned by EB cell projection lithography

机译：通过EB细胞投影光刻图案化的新型CD-SEM校准参考

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摘要

A silicon grating pattern with a 100-nm pitch size for calibration of electron-beam (EB) metrology systems was formed by EB cell projection writing using a grating stencil mask and dry etching. According to the evaluation results from a critical-dimension scanning electron microscope (CD-SEM), the uniformity of the pitch size in a 1.8 × 1.8-mm chip was smaller than 3 nm within 3a in the x and y directions. The obtained 100-nm pitch size was calibrated by DUV laser diffraction. The difference between designed 100-nm pitch size and the calibrated pitch size by DUV laser diffraction was smaller than 0.1 nm. It is thus concluded that more precise calibration of the CD-SEM using this 100-nm pitch grating is expected compared with conventional calibration using 240-nm pitGh reference grating fabricated by laser-interferometer lithography and anisotropic chemical etching.
机译：通过使用光栅模板掩模的EB单元投影写入和干法蚀刻，形成用于校准电子束（EB）计量系统的间距为100 nm的硅光栅图形。根据临界尺寸扫描电子显微镜（CD-SEM）的评估结果，在1.8 x 1.8 mm芯片中，间距尺寸的均匀性在x和y方向的3a范围内小于3 nm。通过DUV激光衍射对获得的100nm间距尺寸进行校准。通过DUV激光衍射设计的100 nm间距尺寸与校准间距尺寸之间的差异小于0.1 nm。因此得出的结论是，与使用通过激光干涉仪光刻和各向异性化学刻蚀制造的240 nm pitGh参考光栅的常规校准相比，期望使用此100 nm间距光栅对CD-SEM进行更精确的校准。

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