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Angular dependence of SiO_2 etching in plasmas containing heptafluoropropyl methyl ether

机译：含七氟丙基甲基醚的等离子体中SiO_2蚀刻的角度依赖性

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摘要

SiO2 was etched in heptafluoropropyl methyl ether (HFE-347mcc3)/Ar and C4F8/Ar plasmas, separately, to evaluate the feasibility of the use of fluorinated ether plasmas as an alternative to perfluoro carbon plasmas. The etch rates of SiO2 in HFE-347mcc3/Ar plasma were higher than those in C4F8/Ar plasma because the O atoms in HFE-347mcc3 produced O radicals that reacted with fluorocarbons to produce volatile products, thus consuming more fluorocarbon films. In HFE-347mcc3/Ar plasmas, the changes in the normalized etch yield (NEY) with ion-incident angle followed nearly the same patterns at bias voltages higher than -600 V, while the NEY at -400 V was lower than those at other bias voltages. On the other hand, the NEYs of C4F8/Ar plasmas increased with bias voltage, indicating a strong dependence on the bias voltage. The characteristic changes in the NEY in HFE-347mcc3/Ar plasmas were correlated with the thickness and the fluorine-to-carbon ratio of the steady-state film formed on the surface of the substrate.
机译：分别在七氟丙基甲基醚（HFE-347mcc3）/ Ar和C4F8 / Ar等离子体中蚀刻SiO2，以评估使用氟化醚等离子体替代全氟碳等离子体的可行性。 HFE-347mcc3 / Ar等离子体中SiO2的蚀刻速率高于C4F8 / Ar等离子体，因为HFE-347mcc3中的O原子产生的O自由基与碳氟化合物反应生成挥发性产物，从而消耗更多的碳氟化合物薄膜。在HFE-347mcc3 / Ar等离子体中，归一化蚀刻量（NEY）随离子入射角的变化在高于-600 V的偏置电压下遵循几乎相同的模式，而在-400 V时的NEY低于其他条件下的NEY。偏置电压。另一方面，C4F8 / Ar等离子体的NEYs随着偏置电压的增加而增加，表明对偏置电压的依赖性很大。 HFE-347mcc3 / Ar等离子体中NEY的特性变化与形成在基板表面的稳态膜的厚度和氟碳比相关。

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