...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Comparison of hydrogen detection by WO_x/SiC and Pt/WO_x/SiC structures using amperometric and potentiometric modes of measurement
【24h】

Comparison of hydrogen detection by WO_x/SiC and Pt/WO_x/SiC structures using amperometric and potentiometric modes of measurement

机译：使用安培和电位测量模式比较WO_x / SiC和Pt / WO_x / SiC结构检测氢

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hydrogen sensors were fabricated with a well-known structure, formed by depositing WO,, films (with or without an additional Pt overlayer) onto SiC substrates. These sensors differed in terms of the morphology and nanostructure of the WOx films, which were pulsed laser deposited (PLD) under varying conditions. The sensory characteristics of WOx/SiC and Pt/WOx/SiC samples were analyzed using conventional current-voltage measurements. In addition, the possibility of detecting an electrical signal in these structures without applying an external voltage (EMF-powered mode) was investigated. The sensor response strongly depended on the qualifies of the metal oxide film, including its strength, uniformity, continuity, and adhesion to the SiC substrate. Optimization of the PLD allowed the formation of triclinic WOx 3 and monoclinic W18049 films with relatively good quality. The current measured at 300 degrees C by the amperometric method for the WOx/SiC sensors increased by 15 times (up to 24 mu A at a voltage of 0.5 V) when 2% H-2 was added to air. For the Pt/WOx/SiC sensors, the current increased by up to 100 times. The highest response to 2% H-2 in the potentiometric mode of measurement was found for the WOx/SiC sensor containing W18O49 film. The EMF-initiated voltage increased by 27 times. The highest voltage detected for an external load of 1 k Omega was similar to 400 mu V. The N film deposition markedly worsened the sensory properties of Pt/WOx/SiC structures measured by the EMF-powered mode. Possible mechanisms of the appearance of the EMF in the prepared structures are considered.
机译：氢传感器以众所周知的结构制造，该结构通过将WO膜（有或没有附加的Pt覆盖层）沉积到SiC衬底上而形成。这些传感器在WOx膜的形态和纳米结构方面有所不同，它们是在变化的条件下通过脉冲激光沉积（PLD）制成的。使用常规电流-电压测量分析了WOx / SiC和Pt / WOx / SiC样品的感官特性。此外，研究了在不施加外部电压（EMF供电模式）的情况下检测这些结构中电信号的可能性。传感器的响应很大程度上取决于金属氧化物膜的质量，包括其强度，均匀性，连续性和对SiC衬底的附着力。 PLD的优化允许形成三斜晶WOx <3和质量相对较好的单斜W18049薄膜。当向空气中添加2％H-2时，通过安培法在300摄氏度下对WOx / SiC传感器测量的电流增加了15倍（在0.5 V电压下高达24μA）。对于Pt / WOx / SiC传感器，电流最多增加100倍。对于包含W18O49膜的WOx / SiC传感器，在电位测量模式下对2％H-2的响应最高。电动势引发的电压增加了> 27倍。在1 k Omega的外部负载下检测到的最高电压类似于400μV。通过EMF供电模式测得的N膜沉积显着恶化了Pt / WOx / SiC结构的感官性能。考虑了制备的结构中EMF出现的可能机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号