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Ag nanoparticles in compound metal oxide semiconductors: Syntheses and characterizations

机译:复合金属氧化物半导体中的银纳米颗粒:合成与表征

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Thermal annealing of Ag-Cu bi-layer thin films on silica-glass substrates either in air or in oxygen environment has led to the formation of novel composite materials (Ag nanoparticles in compound metal oxide semiconductors). Optical absorption and electron microscopy results have confirmed the presence of Ag nanoparticles in oxide semiconductor materials upon annealing. Drastic reductions of the optical absorption intensity in samples annealed at higher temperatures in different atmospheres are explained as a result of thermal growth of the compound metal oxide semiconductor phases. In particular, X-ray diffraction and photoelectron spectroscopy measurements reveal the phases of mixed oxides in the annealed samples. Various experimental measurements discussed here corroborate well with the observed optical results.
机译:在空气或氧气环境中在二氧化硅玻璃基板上对Ag-Cu双层薄膜进行热退火导致了新型复合材料(复合金属氧化物半导体中的Ag纳米粒子)的形成。光学吸收和电子显微镜结果已经证实,退火后氧化物半导体材料中存在Ag纳米颗粒。作为化合物金属氧化物半导体相的热生长的结果,解释了在较高温度下在不同气氛中退火的样品中光吸收强度的急剧降低。特别地,X射线衍射和光电子能谱测量显示了退火样品中混合氧化物的相。这里讨论的各种实验测量结果与观察到的光学结果很好地吻合。

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