...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate
【24h】

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

机译：铝诱导结晶技术在玻璃基板上形成硼磷掺杂多晶硅薄膜的固相外延增稠

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of similar to 200 nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p(+) type (similar to 2 x 10(18) cm(-3)). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have advantages to improve the thin film quality by the overdoping induced passivation. In this study, boron (B) and phosphorus (P) doped AIC seed layers were thicken to similar to 2 mu m by solid phase epitaxy (SPE) technique at 800 degrees C for 3 h under nitrogen flow in a tube furnace. During the crystallization annealing, exodiffusion of dopants was formed through the SPE film from the AIC seed layer. Optical microscope and electron back scattering diffraction technique (EBSD) were used to analyse the structural quality of the Si films. The poly-Si layer with an average grain size value of similar to 32 mu m was formed by AIC + SPE technique for P doped samples while EBSD analysis gave no results for B doped samples due to the quite deterioration on the surface of the films. AIC + SPE films were analyzed in terms of structural properties by using micro-Raman Spectroscopy and X-ray diffraction systems. The results showed that the crystallinity of compressive stress formed AIC + SPE films reached up to 98.55%. Additionally, the Raman analysis pointed out that no temperature-induced stress were generated in the AIC + SPE films while compressive stress was induced by increasing the annealing duration for doped AIC film. For all samples, the preferred orientation was <100>, and the crystallite size up to 44.4 nm was formed by phosphorus doping of AIC films. The doping efficiency was determined by time-of-flight secondary ion mass spectroscopy for doped samples. A graded n(+)n doping profile was obtained by exo-diffusion of phosphorus from the overdoped seed layer during the epitaxial thickening while boron doping of SPE film has failed with exo-diffusion of boron from AIC seed layer into SPE film. Finally, high-quality n(+)n type poly-Si films were fabricated on glass substrate by using AIC + SPE technique.
机译：铝诱导结晶（AIC）技术可用于在氮化硅上形成高质量和大晶粒的多晶硅（poly-Si）薄膜，其厚度接近200 nm，并用作种子层涂层玻璃基板。多亏了AIC工艺中的铝金属，AIC薄膜的自然掺杂为p（+）型（类似于2 x 10（18）cm（-3））。另一方面，可以通过对缺陷进行部分掺杂来控制载流子的重组，这些缺陷可以具有通过过量掺杂引起的钝化来改善薄膜质量的优点。在这项研究中，通过固相外延（SPE）技术在管式炉中在氮气流下800摄氏度加热3小时，硼（B）和磷（P）掺杂的AIC晶种层的厚度增至接近2微米。在结晶退火过程中，掺杂剂通过SPE膜从AIC种子层向外扩散。用光学显微镜和电子背散射衍射技术（EBSD）分析了硅膜的结构质量。对于P掺杂的样品，通过AIC + SPE技术形成了平均晶粒尺寸值近似于32μm的多晶硅层，而EBSD分析却没有发现B掺杂的样品的结果，这是由于膜表面的相当差的结果。使用显微拉曼光谱和X射线衍射系统分析了AIC + SPE膜的结构性质。结果表明，压应力形成的AIC + SPE薄膜的结晶度达到98.55％。此外，拉曼分析指出，在AIC + SPE膜中没有产生温度引起的应力，而通过增加掺杂AIC膜的退火时间来引起压应力。对于所有样品，优选的取向是<100>，并且通过对AIC膜进行磷掺杂来形成高达44.4nm的微晶尺寸。通过飞行时间二次离子质谱法确定掺杂样品的掺杂效率。通过在外延增厚期间从过量掺杂的种子层中进行磷的外扩散而获得了分级的n（+）n掺杂分布，而SPE膜的硼掺杂由于硼从AIC种子层向SPE膜中的外扩散而失败。最后，采用AIC + SPE技术在玻璃基板上制备了高质量的n（+）n型多晶硅薄膜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号