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Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature

机译：负衬底偏压在低温下改善多晶硅薄膜的结晶度

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摘要

Polycrystalline silicon (p-Si) thin films are fabricated by plasma enhanced chemical vapor deposition (PECVD) at low substrate temperature (180 degrees C) with high-hydrogen dilution. Negative DC substrate bias is applied during the deposition process for improving the crystallinity of thin films. It is found that there is a phase transition from nanocrystalline phase to polycrystalline phase at negative bias = 50 V, as identified by scanning electron microscopy (SEM). The optimized p-Si thin film with large grains (similar to 480 nm) are obtained at negative bias = 100 V. The deconvoluted Raman spectra reveal that the p-Si thin film is a mixture including amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and p-Si, and the crystalline volume fraction gradually increases with the substrate negative bias in the range of 0-100 V. The impacts of negative bias on the optical and electrical properties of p-Si thin films have been investigated. The growth mechanism of the p-Si grains has been discussed in detail. A grain-merging model is proposed for explaining the effect of negative bias on the formation of large p-Si grains at low temperature. (C) 2017 Elsevier B.V. All rights reserved.
机译：多晶硅（p-Si）薄膜是通过在低基板温度（180摄氏度）下用高氢气稀释的等离子体增强化学气相沉积（PECVD）制成的。在沉积过程中施加负DC衬底偏压以改善薄膜的结晶度。如通过扫描电子显微镜（SEM）所鉴定的，发现在负偏压＝ 50V下存在从纳米晶相到多晶相的相变。在负偏压= 100 V时获得了具有大晶粒（近似480 nm）的优化的p-Si薄膜。反卷积拉曼光谱显示该p-Si薄膜是包含非晶硅（a-Si），纳米晶体的混合物硅（nc-Si）和p-Si，并且随着衬底负偏压在0-100 V范围内，晶体体积分数逐渐增加。负偏压对p-Si薄膜的光学和电学性质的影响是被调查。已经详细讨论了p-Si晶粒的生长机理。提出了一种晶粒合并模型来解释负偏压对低温下大p-Si晶粒形成的影响。 （C）2017 Elsevier B.V.保留所有权利。

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  • 来源
    《Thin Solid Films》 |2017年第may1期|90-96|共7页
  • 作者

    Liu Jia; Liu Bin; Zhang Xisheng; Guo Xiaojia; Liu Shengzhong (Frank);

  • 作者单位

    Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China;

    Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China;

    Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China;

    Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China;

    Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China|Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State key Lab Catalysis,iChEM, Dalian 116023, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    p-Si; Thin film; Bias; PECVD;

    机译：p-Si;薄膜;偏压;PECVD;

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