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首页> 外文期刊>Thin Solid Films >Microstructure and mechanical properties of sputter deposited tantalum nitride thin films after high temperature loading
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Microstructure and mechanical properties of sputter deposited tantalum nitride thin films after high temperature loading

机译：高温加载后溅射沉积氮化钽薄膜的微观结构和力学性能

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The properties of tantalum nitride thin films sputter deposited with and without breaks on pure and oxidized silicon wafers were investigated with respect to their potential use as strain gauges in micromachined sensors for harsh environmental applications. The thin films were deposited using direct current magnetron sputtering at a constant back pressure and plasma power. To lower the deposition temperature the film synthetization is done in intervals allowing the use of lift-off technology to pattern the thin films. For the evaluation of microstructural, chemical and mechanical film properties, a large variety of techniques such as focused ion beam, scanning electron microscopy, X-ray photoelectron spectroscopy, glow discharge optical emission spectroscopy, X-ray diffraction and wafer bow measurements were applied. Basically, the thermal oxidation of the thin films leads to a change of thin film stress due to oxygen penetration resulting in addition in an increase in film thickness and resistivity. Finally, the impact of interval length during film synthetization is investigated. (C) 2017 Elsevier B.V. All rights reserved.
机译：就其在潜在的恶劣环境应用中作为微机械传感器中的应变仪的潜在用途而言，研究了在纯硅和氧化硅晶片上溅射沉积而无间断溅射沉积的氮化钽薄膜的性能。使用直流磁控溅射在恒定背压和等离子功率下沉积薄膜。为了降低沉积温度，薄膜合成需要间隔进行，从而允许使用剥离技术对薄膜进行构图。为了评估微结构，化学和机械膜的性能，应用了多种技术，例如聚焦离子束，扫描电子显微镜，X射线光电子能谱，辉光放电光发射能谱，X射线衍射和晶圆弯曲测量。基本上，由于氧的渗透，薄膜的热氧化导致薄膜应力的变化，从而导致膜厚度和电阻率的增加。最后，研究了膜合成期间间隔长度的影响。 （C）2017 Elsevier B.V.保留所有权利。

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