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首页> 外文期刊>Thin Solid Films >Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 mu m
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Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 mu m

机译：p型掺杂和电场对1.55μm工作的GaNAsBi / GaAs量子阱探测器电子能带结构和光学性能的影响

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摘要

The optical properties of p-type doped lattice matched GaNAsBi/GaAs single quantumwell (SQW) were theoretically studied in order to reach the maximum of absorption at 1.55 mu m telecommunication wavelength. The calculation was performed using a numerical method based on the mixture of a self-consistent procedure and the band anticrossing model. We investigated the effect of p doping density in thewell GaNAsBi on the subband energies, Fermi level and the confining hole density distribution for the specific couple (wellwidth, Bi composition), with respect to confinement conditions. The increase of doping density led to a shift of the fundamental transition to blue. The effect of the applied electric field on the physical parameters was also examined. It was found that unlike the n-type doping, p-type doping of the studied SQW obeys the restrictive conditions determined in this work. (C) 2016 Elsevier B.V. All rights reserved.
机译：从理论上研究了p型掺杂晶格匹配的GaNAsBi / GaAs单量子阱（SQW）的光学性质，以便在1.55μm的电信波长下达到最大吸收。基于自洽程序和带反交叉模型的混合，使用数值方法进行计算。我们研究了阱GaNAsBi中p掺杂密度对子带能量，费米能级和特定耦合（阱宽，Bi组成）相对于约束条件的约束孔密度分布的影响。掺杂密度的增加导致基本过渡转变为蓝色。还检查了施加的电场对物理参数的影响。已经发现，与n型掺杂不同，所研究的SQW的p型掺杂遵守了这项工作中确定的限制条件。 （C）2016 Elsevier B.V.保留所有权利。

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