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Performance enhancement of III-V multi-junction solar cells using indium-tin-oxide electrodes

机译：使用铟锡氧化物电极增强III-V型多结太阳能电池的性能

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摘要

InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabricated on the devices and denoted as samples A, B, and C, respectively. The thickness of ITO film is 200 nm, and its transmittance can reach 99% in the visible region. Based on the current density-voltage (J-V) measurement, the short-circuit current density (J(sc)) of samples A, B, and C are 8.13, 9.35, and 10.90 mA/cm(2), while the conversion efficiencies of these three samples are evaluated to be 15.45%, 18.14%, and 20.24%, respectively. This reveals that sample C possesses 31.0% enhancement in the conversion efficiency compared to that of sample A. Additionally, the series resistances (Rs) of samples A, B, and C are 21.43, 22.94, and 6.71 Omega-cm(2), respectively. The lowest Rs occurred in sample C can be attributed to the elimination of the lateral resistance between electrodes because this device was fabricated with the ITO-overcoated front-side electrode. In sample C, since the ITO front-side electrode can cover overall surface of the device, all regions on the sample surface can extract the electrons, leading to the highest J(sc). (C) 2016 Elsevier B.V. All rights reserved.
机译：通过金属有机化学气相沉积法在p型GaAs衬底上制备了InGaP / GaAs双结太阳能电池。在器件上分别制造了三种类型的正面电极，包括AuGe / Au金属指，ITO指和ITO涂层，分别表示为样品A，B和C。 ITO膜的厚度为200 nm，在可见光区域的透射率可以达到99％。根据电流密度-电压（JV）测量，样品A，B和C的短路电流密度（J（sc））为8.13、9.35和10.90 mA / cm（2），而转换效率这三个样本中的三个样本分别被评估为15.45％，18.14％和20.24％。这表明与样品A相比，样品C的转换效率提高了31.0％。此外，样品A，B和C的串联电阻（Rs）为21.43、22.94和6.71Ω-cm（2），分别。样品C中出现的最低Rs可以归因于电极之间的横向电阻的消除，因为该器件是用ITO包覆的正面电极制成的。在样品C中，由于ITO正面电极可以覆盖器件的整个表面，因此样品表面上的所有区域都可以提取电子，从而导致最高的J（sc）。 （C）2016 Elsevier B.V.保留所有权利。

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  • 来源
    《Thin Solid Films》 |2016年第1期|36-40|共5页
  • 作者

    Kao Yu-Cheng; Ou Sin-Liang; Wu Fan-Lei; Horng Ray-Hua;

  • 作者单位

    Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 402, Taiwan;

    Da Yeh Univ, Dept Mat Sci & Engn, Changhua 515, Taiwan;

    Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 402, Taiwan;

    Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 402, Taiwan|Natl Chiao Tung Univ, Dept Elect Engn, 1001 Univ Rd, Hsinchu 300, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    InGaP/GaAs dual-junction solar cells; ITO-finger; ITO-overcoated;

    机译：InGaP / GaAs双结太阳能电池;ITO指;ITO涂层;绝缘;

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