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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >IMPROVED PERFORMANCE OF III-V MULTI-JUNCTION SOLAR CELLS FABRICATED WITH INDIUM-TIN-OXIDE ELECTRODES
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IMPROVED PERFORMANCE OF III-V MULTI-JUNCTION SOLAR CELLS FABRICATED WITH INDIUM-TIN-OXIDE ELECTRODES

机译：用锡氧化铟锡电极制造的III-V多结太阳能电池的性能提高

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In this study, three front-side electrodes consisting of AuGe/Au metal-finger with anti-reflective layer (ARL), ITO-finger with ARL, and ITO-overcoated types without ARL were fabricated for InGaP/GaAs dual-junction solar cells, and samples A, B, and C were used to denote these three devices, respectively. For the sample C with ITO-overcoated electrode, the 200-nm-thick ITO film with a high transmittance of 91% in the visible wavelength range was deposited. The results obtained from the current density-voltage measurements indicated the short-circuit current densities (J_(sc)) of samples A, B, and C are 9.61, 11.16, and 11.65 mA/cm~2, respectively. Meanwhile, the conversion efficiencies of these three solar cells are measured to be 17.50%, 20.41%, and 20.92%, respectively. After replacing the AuGe/Au metal-finger electrode with the ITO-overcoated electrode, there is 19.5% improvement in the conversion efficiency occurred in the device. Moreover, because the ITO front-side electrode can cover overall surface of the device, all regions on the surface of sample C would extract the electrons, resulting in the highest J_(sc). Not only, the ITO was also used to be ARL and enhanced the device performance.
机译：在这项研究中，包括由AuGe / Au的金属手指的带防反射层（ARL），ITO指用ARL，和ITO-外涂类型，而ARL三个前侧电极对的InGaP /砷化镓双结太阳能电池制造和样品A，B，和C被用来表示这三个设备，分别。对于具有ITO-外涂的电极样品C，用91％在可见光波长范围内具有高透射率的200-nm厚的ITO膜沉积。从电流密度 - 电压测量中获得的结果分别表示样品的短路电流密度（J_（SC））A，B，和C是9.61，11.16，和11.65毫安/厘米〜2，。另一方面，这三个太阳能电池的转换效率被测量为17.50％，20.41％，20.92和％分别。与ITO-外涂电极更换由AuGe / Au的金属指状电极之后，在转换效率19.5％的改善发生在装置中。此外，由于在ITO正面侧电极可以覆盖装置的整个表面，样品C的表面上的所有区域将提取电子，导致最高J_（SC）。不仅时，ITO也被用来为ARL和增强的器件性能。

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