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首页> 外文期刊>Japanese journal of applied physics >III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique
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III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique

机译：室温晶片键合技术制备的III-V族化合物半导体多结太阳能电池

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摘要

We have developed III-V compound semiconductor multi-junction solar cells by a room-temperature wafer-bonding technique to avoid the formation of dislocations and voids due to lattice mismatch and thermal damage during a conventional high-temperature wafer-bonding process. First, we separately grew an (Al) GaAs top cell on a GaAs substrate and an InGaAs bottom cell on an InP substrate by metal solid source molecular beam epitaxy. Thereafter, we successfully bonded these sub-cells by the room-temperature wafer-bonding technique and fabricated (Al) GaAs parallel to InGaAs wafer-bonded solar cells. To the best of our knowledge, the obtained GaAs parallel to InGaAs and AlGaAs parallel to InGaAs wafer-bonded solar cells exhibited the lowest electrical and optical losses ever reported. The AlGaAs parallel to InGaAs solar cells reached the maximum efficiency of 27.7% at 120 suns. These results suggest that the room-temperature wafer-bonding technique has high potential for achieving higher conversion efficiencies. (C) 2015 The Japan Society of Applied Physics
机译：我们已经通过室温晶圆键合技术开发了III-V型化合物半导体多结太阳能电池，以避免在常规高温晶圆键合过程中由于晶格失配和热损伤而形成位错和空隙。首先，我们通过金属固体源分子束外延分别在GaAs衬底上生长（Al）GaAs顶部电池和InP衬底上的InGaAs底部电池。此后，我们通过室温晶片键合技术成功地键合了这些子电池，并制造了与InGaAs晶片键合太阳能电池平行的（Al）GaAs。据我们所知，获得的平行于InGaAs的GaAs和平行于InGaAs晶片键合太阳能电池的AlGaAs表现出有史以来最低的电和光损耗。与InGaAs太阳能电池平行的AlGaAs在120个太阳下的最大效率达到27.7％。这些结果表明，室温晶片键合技术具有实现更高转换效率的高潜力。 （C）2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第5期|056601.1-056601.4|共4页
  • 作者

    Arimochi Masayuki; Watanabe Tomomasa; Yoshida Hiroshi; Tange Takashi; Nomachi Ichiro; Ikeda Masao; Dai Pan; He Wei; Ji Lian; Lu Shulong; Yang Hui; Uchida Shiro;

  • 作者单位

    Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan;

    Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan;

    Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan;

    Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan;

    Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China;

    Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan;

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