首页>
外国专利>
MULTI-JUNCTION GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL AND FABRICATION METHOD THEREOF
MULTI-JUNCTION GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL AND FABRICATION METHOD THEREOF
展开▼
机译：多结III-V族化合物半导体太阳能电池及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A multi-junction group III-V compound semiconductor solar cell and fabrication method thereof forms a 2D photonic crystal structure in the topmost window layer of the stacked solar cell units by etching holes in the window layer. The 2D photonic crystal structure causes omni-directional reflection of the sunlight along any transverse plane of the 2D photonic crystal structure and directs the oblique sunlight to enter the bottom surface of the holes, thereby increasing the amount of incident light. By applying the property that the 2D photonic crystal structure causes a wider range of wavelengths to have higher transmission efficiency at the window layer to the multi-junction group III-V compound semiconductor solar cell, energy conversion efficiency may be effectively increased.
展开▼
