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首页> 外文期刊>Thin Solid Films >Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching
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Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching

机译：湿法化学刻蚀在InGaN发光二极管中形成和优化咬边微孔

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摘要

We report on the formation and optimization of undercut-microholes (UM) generated by a wet etching process. GaN epilayers with 6 μm and 15 μm polygonal holes (PH) were grown by using selective metal organic chemical vapor deposition under identical growth conditions. The samples were wet etched with either a KOH solution or a mixed H_3PO_4:H_2SO_4 solution. Both kinds of etching solution produced the formation of UM. In the case of the etching produced with the mixed H_3PO_4:H_2SO_4 solution, the angle of UM was varied with an increase of H_2SO_4 in the solution. The etching produced by the KOH solution was very simple, and it formed a clear UM with an angle of 62°. This was achieved without etching the hard mask because of the selective etching and crystallographic characteristics of the GaN. UM were optimized through etching with PH structures, and the results showed formation of clear UM in a 15 μm PH structure.
机译：我们报告了通过湿法蚀刻工艺产生的底切微孔（UM）的形成和优化。通过在相同的生长条件下使用选择性金属有机化学气相沉积法生长具有6μm和15μm多边形孔（PH）的GaN外延层。样品用KOH溶液或混合的H_3PO_4：H_2SO_4溶液湿法蚀刻。两种蚀刻溶液均会形成UM。在使用混合的H_3PO_4：H_2SO_4溶液进行蚀刻的情况下，UM的角度随溶液中H_2SO_4的增加而变化。 KOH溶液产生的蚀刻非常简单，并且形成了62°角的透明UM。由于GaN的选择性刻蚀和晶体学特性，无需刻蚀硬掩模即可实现这一点。通过用PH结构进行蚀刻来优化UM，结果表明在15μm的PH结构中形成了透明的UM。

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  • 来源
    《Thin Solid Films》 |2012年第13期|p.4373-4377|共5页
  • 作者

    Hyun-Kyu Kim; Jae-Hyoung Ryu; Hee-Yun Kim; Ji-Hye Kang; Nam Han; Young Jae Park; Beo Deul Ryu; Chang Hee Hong; Hyung Gu Kim;

  • 作者单位

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea Devices Materials R&D lab, IC Electronics Institute of Technology, Seoul 137-724, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    wet etching; gallium nitride; light emitting diodes; GaN-LED; undercut holes; potassium hydroxide;

    机译：湿蚀刻氮化镓发光二极管;GaN-LED;底切孔;氢氧化钾;

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