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Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering

机译：反应式射频磁控溅射沉积TaSiN薄膜的性能

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摘要

TaSiN is a promising material for application as electrically conductive diffusion barrier for the integration of high permittivity perovskite materials in integrated circuits. TaSiN thin films were deposited by reactive radio frequency magnetron sputtering using TaSi and TaSi_(2.7) targets in an Ar/N_2 atmosphere. The sputter power was varied in order to achieve different TaSiN compositions. The stoichiometry of as-deposited films was estimated using Rutherford backscattering spectroscopy. The as-deposited TaSiN thin films are amorphous. Their crystallization temperature is above 700 ℃ and increases with higher nitrogen content. They have metallic conduction and ohmic behavior. The resistivity of as deposited films is in the range from 10~(-6)Ω m up to 10~(-3)Ω m and increases with nitrogen content. It was found that p~(++)-Si/Ta_(21)Si_(57)N_(21) develops unacceptable high contact resistance. Introducing an intermediate Pt layer the stack p~(++)-Si/Pt/Ta_(21)Si_(57)N_(21) had a good conductive properties and good thermal stability at 700 ℃.
机译：TaSiN是一种有前途的材料，可用作导电扩散阻挡层，可将高介电常数的钙钛矿材料集成到集成电路中。在Ar / N_2气氛中，使用TaSi和TaSi_（2.7）靶通过反应性射频磁控溅射沉积TaSiN薄膜。改变溅射功率以便获得不同的TaSiN组成。沉积薄膜的化学计量是使用卢瑟福背散射光谱法估算的。沉积的TaSiN薄膜是非晶的。它们的结晶温度高于700℃，并随着氮含量的增加而增加。它们具有金属导电和欧姆行为。沉积膜的电阻率在10〜（-6）Ωm到10〜（-3）Ωm范围内，并随氮含量的增加而增加。发现p〜（++）-Si / Ta_（21）Si_（57）N_（21）产生不可接受的高接触电阻。引入中间的Pt层堆叠p〜（++）-Si / Pt / Ta_（21）Si_（57）N_（21）在700℃时具有良好的导电性能和良好的热稳定性。

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