Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films

A.-S. Keita; A. En Naciri; F. Delachat; M. Carrada; G. Ferblantier; A. Slaoui; M. Stchakovsky

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Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films

机译：快速热退火富硅氮化硅膜中PECVD生长的硅纳米级夹杂物的介电功能

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Spectroscopic ellipsometry (SE) measurements were carried out in order to characterize the optical properties of silicon nanoscale inclusions (Si-ni) contained in silicon-rich silicon nitride (SRSN) films. These films were deposited using the plasma enhanced chemical vapor deposition (PECVD) technique followed by rapid thermal annealing (RTA) during 1 min. We focus our study on the influence of the deposition and annealing conditions - such as the ammonia to silane flow ratio R, the annealing atmosphere and temperature - on the optical responses of the SRSN layers and the behavior of the Si-ni dielectric functions. Our results suggest that the variation of R affects in a more significant way the structure and optical properties of the SRSN films than the change of the annealing gas or temperature.

机译：为了表征富硅氮化硅（SRSN）膜中所含硅纳米级夹杂物（Si-ni）的光学特性，进行了椭圆偏振光谱（SE）测量。使用等离子增强化学气相沉积（PECVD）技术沉积这些膜，然后在1分钟内进行快速热退火（RTA）。我们将研究重点放在沉积和退火条件（例如氨与硅烷的流量比R，退火气氛和温度）对SRSN层的光学响应以及Si-ni介电功能行为的影响上。我们的结果表明，与退火气体或温度的变化相比，R的变化对SRSN膜的结构和光学性能的影响更大。

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来源
《Thin Solid Films》 |2011年第9期|p.2870-2873|共4页
作者
A.-S. Keita; A. En Naciri; F. Delachat; M. Carrada; G. Ferblantier; A. Slaoui; M. Stchakovsky;
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作者单位

Laboratoire de Physique des Milieux Denses (LPMD), Universite Paul Verlaine-Metz, 1 Boulevard Arago, 57070 Metz Technopole, France;

Laboratoire de Physique des Milieux Denses (LPMD), Universite Paul Verlaine-Metz, 1 Boulevard Arago, 57070 Metz Technopole, France;

Institut d'Electronique du Solide et des Systemes, UMR CNRS-UdS, 23 rue du Lcess, 67037 Strasbourg, France;

Institut d'Electronique du Solide et des Systemes, UMR CNRS-UdS, 23 rue du Lcess, 67037 Strasbourg, France;

Institut d'Electronique du Solide et des Systemes, UMR CNRS-UdS, 23 rue du Lcess, 67037 Strasbourg, France;

Institut d'Electronique du Solide et des Systemes, UMR CNRS-UdS, 23 rue du Lcess, 67037 Strasbourg, France;

Horiba Scientific, 5 Avenue Arago, 91380 Chilly-Mazarin, France;

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spectroscopic ellipsometry; silicon-rich silicon nitride; silicon; nanoscale inclusions; optical properties; dielectric functions; rapid thermal annealing;

机译：椭圆偏振光谱法富硅氮化硅硅;纳米级夹杂物;光学性质介电功能快速热退火;

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Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films

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