Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy

Chung-Jong Yu; Nark-Eon Sung; Han-Koo Lee; Hyun-Joon Shin; Young-Duck Yun; Seen-Woong Kang; Ik-Jae Lee

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Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy

机译：X射线衍射和X射线吸收光谱法测定的低温生长ZnO薄膜的结构性能

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The epitaxial growth of ZnO thin films on Al_2O_3 (0001) substrates have been achieved at a low-substrate temperature of 150 °C using a dc reactive sputtering technique. The structures and crystallographic orientations of ZnO films varying thicknesses on sapphire (0001) were investigated using X-ray diffraction (XRD). We used angle-dependent X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy to examine the variation of local structure. The XRD data showed that the crystallinity of the film is improved as the film thickness increases and the strain is fully released as the film thickness reached about 800 A. The Zn K-edge XANES spectra of the ZnO films have a strong angle-dependent spectral feature resulting from the preferred c-axis orientation. The wurtzite structure of the ZnO films was explicitly shown by the XRD and EXAFS analysis. The carrier concentration, Hall mobility and resistivity of the 800 A-thick ZnO film were 1.84× 10~(19) cm"3, 24.62 cm~2V~(-1) S~(-1)1, and 1.38 × 10~(-2)

机译：使用直流反应溅射技术，在150°C的低衬底温度下，在Al_2O_3（0001）衬底上实现了ZnO薄膜的外延生长。使用X射线衍射（XRD）研究了蓝宝石（0001）上厚度不同的ZnO膜的结构和晶体学取向。我们使用了角度相关的X射线吸收近边缘结构（XANES）和扩展X射线吸收精细结构（EXAFS）光谱来检查局部结构的变化。 XRD数据表明，随着膜厚度的增加，膜的结晶度得到改善，并且当膜厚度达到约800 A时，应变完全释放。ZnO膜的Zn K边缘XANES光谱具有很强的角度依赖性光谱首选c轴方向产生的特征。 XRD和EXAFS分析明确显示了ZnO薄膜的纤锌矿结构。 800 A厚的ZnO薄膜的载流子浓度，霍尔迁移率和电阻率分别为1.84×10〜（19）cm“ 3、24.62 cm〜2V〜（-1）S〜（-1）1和1.38×10〜（-2）

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来源
《Thin Solid Films》 |2011年第13期|p.4366-4370|共5页
作者
Chung-Jong Yu; Nark-Eon Sung; Han-Koo Lee; Hyun-Joon Shin; Young-Duck Yun; Seen-Woong Kang; Ik-Jae Lee;
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Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;

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正文语种 eng
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zinc oxide; x-ray diffraction; x-ray absorption near-edge structure; spectroscopy; extented x-ray absorption fine structure; spectroscopy; epitaxy; thin films; hall-effect measurement;

机译：氧化锌X射线衍射;X射线吸收近边缘结构;光谱学扩展的X射线吸收精细结构;光谱学外延薄膜;霍尔效应测量;

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Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy

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