Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells

Tao Chen; Yuelong Huang; Deren Yang; Reinhard Carius; Friedhelm Finger

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Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells

机译：热线CVD开发微晶碳化硅窗口层及其在微晶硅薄膜太阳能电池中的应用

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Microcrystalline silicon carbide (μc-SiC:H) thin films in stoichiometric form were deposited from the gas mixture of monomethylsilane (MMS) and hydrogen by Hot-Wire Chemical Vapor Deposition (HWCVD). These films are highly conductive n-type. The optical gap E_04 is about 3.0-3.2 eV. Such pc-SiGH window layers were successfully applied in n-side illuminated n-i-p microcrystalline silicon thin film solar cells. By increasing the absorber layer thickness from 1 to 2.5 pm, the short circuit current density (jsc) increases from 23 to 26 mA/cm~2 with Ag back contacts. By applying highly reflective ZnO/Ag back contacts, jsc=29.6 mA/cm~2 and tj=9.6% were achieved in a cell with a 2-μm-thick absorber layer.

机译：通过热线化学气相沉积（HWCVD）从单甲基硅烷（MMS）和氢气的气体混合物中沉积化学计量形式的微晶碳化硅（μc-SiC：H）薄膜。这些膜是高导电性的n型。光学间隙E_04约为3.0-3.2eV。此类pc-SiGH窗口层已成功应用于n侧照明n-i-p微晶硅薄膜太阳能电池。通过将吸收层的厚度从1 pm增加到2.5 pm，带有Ag后触点的短路电流密度（jsc）从23 mA / cm〜2增加到了26 mA / cm〜2。通过使用高反射率的ZnO / Ag背接触，在具有2μm厚吸收层的电池中实现了jsc = 29.6 mA / cm〜2和tj = 9.6％。

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来源
《Thin Solid Films》 |2011年第14期|p.4523-4526|共4页
作者
Tao Chen; Yuelong Huang; Deren Yang; Reinhard Carius; Friedhelm Finger;
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作者单位

IEK5-Photovoltaik, Forschungszentrum Jiilich, Jillich 52425, Germany ,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

IEK5-Photovoltaik, Forschungszentrum Jiilich, Jillich 52425, Germany;

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

IEK5-Photovoltaik, Forschungszentrum Jiilich, Jillich 52425, Germany;

IEK5-Photovoltaik, Forschungszentrum Jiilich, Jillich 52425, Germany;

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正文语种 eng
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关键词
silicon carbide; microcrystalline material; hot-wire cvd; thin film; solar cells;

机译：碳化硅;微晶材料;热线CVD;薄膜;太阳能电池;

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1. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells [J] . Tao Chen, Florian Koehler, Anna Heidt, Japanese journal of applied physics . 2014,第5S1期

机译：热线化学气相沉积制备的用于薄膜硅太阳能电池的铝掺杂p型微晶碳化硅窗口层
2. Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-I-p microcrystalline silicon solar cells [J] . Tao Chen, Yuelong Huang, Haiyan Wang, Thin Solid Films . 2009,第12期

机译：HWCVD在不同灯丝温度下生长的微晶碳化硅薄膜及其在n-I-p微晶硅太阳能电池中的应用
3. Preparation of microcrystalline silicon solar cells on microcrystalline silicon carbide window layers grown with HWCVD at low temperature [J] . Huang Y, Chen T, Gordijn A, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2008,第19a25期

机译：在低温下通过HWCVD生长的微晶碳化硅窗口层上的微晶硅太阳能电池的制备
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机译：通过低温化学气相沉积法生长的N边发光NIP微晶硅太阳能电池与微晶碳化硅窗口层
5. Amorphous and microcrystalline silicon thin films grown by photon assisted electron cyclotron resonance chemical vapor deposition for heterojunction solar cells and thin film transistors. [D] . Song, Young Joo. 2000

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6. Radial n-i-p structure SiNW-based microcrystalline silicon thin-film solar cells on flexible stainless steel [O] . Xiaobing Xie, Xiangbo Zeng, Ping Yang, 2012

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7. N-Side Illuminated Nip Microcrystalline Silicon Solar Cells With Microcrystalline Silicion Carbide Window Layers Grown Via HWCVD at Low Temperature [O] . Huang Y., Gordijn A., Finger F., 2007

机译：具有在低温下通过HWCVD生长的微晶碳化硅窗口层的N侧照明Nip微晶硅太阳能电池
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Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells

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