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首页> 外文期刊>Thin Solid Films >Carrier polarity reversal with sodium addition in Bridgman-grown CuInSe_2
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Carrier polarity reversal with sodium addition in Bridgman-grown CuInSe_2

机译:在Bridgman生长的CuInSe_2中,添加钠可逆转载流子极性

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摘要

Ingots containing monocrystals of CuInSe_2, grown in this laboratory from stoichiometric melts by a one-ampoule Bridgman method, have always been found to be p-type but become n-type if 0.3 at.% or more of elemental sodium is added to the pre-growth melt. However, if excess selenium is present in the melt, corresponding to the formula CuInSe_2+x, with x =0.2 or 0.4, the ingots remain p-type with sodium additions up to 3 at.% at least. Even so, with smaller Se excesses of x =0.005,0.02 and 0.05, conversion from p- to n-type has been observed in the material with sufficient sodium additions. From the results, a relationship between x and the amount of sodium required for type conversion is beginning to emerge.
机译:在本实验室中,通过一安瓿Bridgman方法从化学计量的熔体中生长的含CuInSe_2单晶锭,一直被发现是p型,但如果将0.3at。%或更多的元素钠添加到预成型体中,则变成n型。 -生长融化。但是,如果熔体中存在过量的硒,对应于分子式CuInSe_2 + x,且x = 0.2或0.4,则铸锭将保持p型,且钠的添加量至少为3 at。%。即便如此,在x含量分别为0.005,0.02和0.05的情况下,Se含量较小时,在添加了足够钠的材料中也观察到了从p型向n型的转化。根据结果​​,x与类型转换所需的钠含量之间的关系开始显现。

著录项

  • 来源
    《Thin Solid Films》 |2011年第21期|p.7337-7340|共4页
  • 作者单位

    Electrical and Computer Engineering Department, McGill University, 3480 University Street, Montreal, Quebec, Canada, H3A 2A7;

    Electrical and Computer Engineering Department, McGill University, 3480 University Street, Montreal, Quebec, Canada, H3A 2A7;

    Electrical and Computer Engineering Department, McGill University, 3480 University Street, Montreal, Quebec, Canada, H3A 2A7;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Copper-indium-diselenide; Sodium; Selenium; Bridgman-growth;

    机译:铜铟二硒化物;钠;硒;布里奇曼生长;

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