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首页> 外文期刊>Thin Solid Films >Sputter-epitaxy and electric properties of multiferroic Bi_(m+1)Fe_(m-3)Ti_3O_(3m+3) thin films
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Sputter-epitaxy and electric properties of multiferroic Bi_(m+1)Fe_(m-3)Ti_3O_(3m+3) thin films

机译：多铁性Bi_（m + 1）Fe_（m-3）Ti_3O_（3m + 3）薄膜的溅射外延和电性能

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摘要

Growth conditions suitable for sputter-epitaxy of Bi_(m+1)Fe_(m-3)Ti_3O_(3m+3) (BFTO) thin films with layered structure have been investigated. The amount of oxygen during deposition was found to be specifically essential for obtaining a good-quality thin film of BFTO with a large m. The (001) epitaxial thin films of BFTO with m of nearly 10 which is expected to retain magnetic order up to room temperature have been successfully grown on (001) SrTiO_3 substrates under the determined optimum condition. The film exhibited leakage current as low as order of 10~(-2)-10~(-1) A/m~2 limited by Schottky emission at the interfaces between the electrodes and the film. In addition, the film showed a ferroelectric polarization curve with Pr=6 uC/cm~2 for applied field of 35 MV/m at room temperature though the curve was unsaturated. These indicate that the BFTO (m = 10) thin films are promising as multiferroics at room temperature.
机译：研究了适合于Bi_（m + 1）Fe_（m-3）Ti_3O_（3m + 3）（BFTO）层状结构薄膜溅射生长的生长条件。发现在沉积过程中的氧气量对于获得大m的BFTO高质量薄膜特别重要。在确定的最佳条件下，已成功在（001）SrTiO_3衬底上成功生长了m接近10的BFTO（001）外延薄膜，该薄膜有望在室温下保持磁序。薄膜在电极与薄膜之间的界面处受到肖特基发射的限制，泄漏电流低至10〜（-2）-10〜（-1）A / m〜2。另外，该膜在室温下以35MV / m的施加场显示出Pr ＝ 6uC / cm〜2的铁电极化曲线，尽管该曲线是不饱和的。这些表明BFTO（m = 10）薄膜有望在室温下用作多铁性材料。

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