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TEM characterization of ALD layers in deep trenches using a dedicated FIB lamellae preparation method

机译:使用专用的FIB薄片制备方法对深沟槽中的ALD层进行TEM表征

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摘要

Driven by the shrinking of microelectronic devices there is a demand for novel high-k insulators and electrode materials. Recently, atomic layer deposition was integrated into volume production to coat the extreme geometries of modern DRAM capacitors. In order to evaluate next generation materials for those applications we introduce a sophisticated, modified TEM lamellae preparation using H-bars and FIB technology that allows to uncover buried features not accessible by conventional preparation. This technique was used to study the film properties of HfO_2, A1N and TaN ALD layers in deep trench structures with aspect ratio up to 50:1. It was demonstrated that the method provides cross section lamellae with low FIB damage as deep as 7 μm below the original sample surface.
机译:在微电子器件的缩小的推动下,需要新颖的高k绝缘体和电极材料。最近,原子层沉积已被集成到批量生产中,以覆盖现代DRAM电容器的极端几何形状。为了评估针对这些应用的下一代材料,我们引入了使用H型杆和FIB技术的先进的改进型TEM薄片制备方法,该技术可揭示常规制备方法无法达到的埋藏特征。该技术用于研究深沟结构中纵横比高达50:1的HfO_2,AlN和TaN ALD层的膜性能。结果表明,该方法可提供比原始样品表面低7μm的低FIB损伤的横截面薄片。

著录项

  • 来源
    《Thin Solid Films》 |2010年第16期|P.4553-4555|共3页
  • 作者单位

    IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany;

    rnTechnische Universitaet Dresden, Department of Electrical Engineering and Information Technology, D-01069 Dresden, Germany;

    rnTechnische Universitaet Dresden, Department of Electrical Engineering and Information Technology, D-01069 Dresden, Germany;

    rnIFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany;

    rnTechnische Universitaet Dresden, Department of Electrical Engineering and Information Technology, D-01069 Dresden, Germany;

    rnIFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ALD; FIB; TEM; high-k insulator; electrode material; deep trench;

    机译:ALD;FIB;TEM;高k绝缘子电极材料深沟;

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