Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

著录项

• 来源
  《Thin Solid Films》 |2008年第12期|3772-3775|共4页
• 作者

  Benliang Lei; Guanghui Yu; Haohua Ye; Sheng Meng; Xinzhong Wang; Chaotong Lin; Ming Qi; Aizhen Li; Gerard Nouet; Pierre Ruterana; Jun Chen;

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• 作者单位

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China Graduate School of the Chinese Academy of Sciences, Peking 100039, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China Graduate School of the Chinese Academy of Sciences, Peking 100039, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China Graduate School of the Chinese Academy of Sciences, Peking 100039, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning road, Shanghai 200050, People's Republic of China;

  Laboratoire Structures des Interfaces et Fonctionnalite des Couches Minces, UMR CNRS 6176, ENSICAEN,6 Boulevard du Marechal Juin, 14050 Caen Cedex, France;

  Laboratoire Structures des Interfaces et Fonctionnalite des Couches Minces, UMR CNRS 6176, ENSICAEN,6 Boulevard du Marechal Juin, 14050 Caen Cedex, France;

  Laboratoire de Recherche sur les Proprietes des Materiaux Nouveaux, IUT d'Alencon, 61250 Damigny, France;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  GaN; polarity; HVPE; AFM; PL; XRD;

  机译：癌症;肥胖;HV pe;A FM;PL;XRD;